NX3008NBKS,115 vs CSD17483F4: Component Comparison for Power Electronics Designers
Quick verdict
For low-current logic-level switching and signal-level multiplexing, the NX3008NBKS,115 dual MOSFET array is the better choice due to its integrated dual device, low gate charge (~0.68 nC @ 4.5 V), and automotive-grade qualification. For higher-current switching or power load applications up to 1.5 A, the CSD17483F4 offers superior current handling, lower R_DS(on) (240 mΩ @ 500 mA, 8 V) and higher power dissipation, making it preferable for power switching and load driving.
Spec comparison table
| Spec | NX3008NBKS,115 | CSD17483F4 | Notes |
|---|---|---|---|
| Product URL | NX3008NBKS,115 | CSD17483F4 | — |
| Configuration | 2 N-Channel (Dual) | Single N-Channel | NX3008NBKS,115 integrates two devices, saving board space for dual switch needs |
| Absolute max drain-source voltage (V_DS) | 30 V | 30 V | Equal voltage rating |
| Continuous drain current (I_D) @ 25 °C | 350 mA | 1.5 A | CSD17483F4 supports >4x higher continuous current |
| Drain current spiking max | 1.4 A | Not specified | NX3008NBKS,115 limited to 1.4 A spike current |
| Power dissipation max (P_D) | 445 mW (device), 990 mW (total) | 500 mW (Ta) | CSD17483F4 slightly higher power handling capability |
| R_DS(on) @ 25°C | 1.0–1.4 Ω @ 350 mA, 4.5 V (typ) | 240 mΩ @ 500 mA, 8 V (max) | CSD17483F4 has significantly lower on-resistance, reducing conduction losses |
| Gate charge Q_g @ 4.5 V | 0.52–0.68 nC (typ) | 1.3 nC (max) | NX3008NBKS,115 requires less gate charge, easing gate drive |
| Input capacitance C_iss @ 15 V | 50 pF | 190 pF | NX3008NBKS,115 has ~4x lower input capacitance, improving switching speed and lower drive losses |
| Output capacitance C_oss @ 25 °C | 6.5 pF (typ) | Not specified | NX3008NBKS,115 lower output capacitance reduces switching losses |
| Reverse transfer capacitance C_rss | 2.2 pF (typ) | Not specified | NX3008NBKS,115 lower C_rss reduces Miller effect, improving switching behavior |
| Gate threshold voltage V_GS(th) | 0.5–1.1 V (typ/max @ 250 µA) | 1.1 V @ 250 µA | NX3008NBKS,115 has lower gate threshold, better for low-voltage logic drive |
| Max gate-source voltage V_GS | ±8 V | 12 V | CSD17483F4 can tolerate higher gate voltages |
| Operating temperature range | -55 °C to +150 °C | -55 °C to +150 °C | Equivalent operating temperature range |
| Package | 6-TSSOP (SC-88, SOT-363) | 3-XFDFN (PICOSTAR) | Different packages; NX3008NBKS,115 is dual device in 6-pin, CSD17483F4 is single device |
| Package dimensions (L x W) | 2.2 mm x 1.35 mm | Not specified | NX3008NBKS,115 smaller footprint but dual device; CSD17483F4 package smaller single MOSFET |
| ESD rating | 2000 V | Not specified | NX3008NBKS,115 has specified ESD rating |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Equivalent technology |
| Grade / Qualification | Automotive grade, AEC-Q101 | Not specified | NX3008NBKS,115 qualified for automotive use |
| Thermal resistance junction-to-ambient (typ) | 300 K/W (device), 390-445 K/W (per transistor) | Not specified | NX3008NBKS,115 thermal resistance data available, no data for CSD17483F4 |
| Gate leakage current (typical @ 25°C) | 0.2–1 µA | Not specified | NX3008NBKS,115 low gate leakage |
| Rise / fall / turn-on/off times (typ @ 25°C) | t_rise 11 ns, t_fall 19 ns, t_on delay 15–30 ns, t_off delay 69–138 ns | Not specified | NX3008NBKS,115 provides switching time data |
Design trade-offs
The NX3008NBKS,115 is a dual N-channel MOSFET array designed for low current applications, such as signal switching, level shifting, or load switching up to 350 mA per channel. Its logic-level gate drive (V_GS(th) as low as 0.5 V) and low gate charge (~0.68 nC @ 4.5 V) make it easy to drive directly from low-voltage MCUs or digital logic without dedicated gate drivers. The low input capacitance (50 pF) and reverse transfer capacitance (2.2 pF) mean lower switching losses and reduced electromagnetic interference (EMI) in fast switching applications, albeit limited by the relatively high R_DS(on) of ~1.0–1.4 Ω at 350 mA. The dual device in a single 6-TSSOP package saves PCB area and simplifies routing for applications requiring two switches. Its automotive-grade qualification (AEC-Q101) also makes it suitable for harsh environments.
In contrast, the CSD17483F4 targets higher current loads with a continuous drain current rating of 1.5 A and a much lower R_DS(on) of 240 mΩ at 500 mA and 8 V gate drive. This results in substantially lower conduction losses at moderate currents. However, it requires a higher gate charge (1.3 nC @ 4.5 V) and higher gate voltage tolerance (up to 12 V), which means a stronger gate driver stage or dedicated MOSFET driver IC is advisable to switch efficiently. The input capacitance is almost 4x higher at 190 pF, which may increase switching losses and EMI if switching frequencies are high. The package difference (3-pin XFDFN vs 6-TSSOP) means layout considerations differ, and the single device means you need two separate MOSFETs if dual switches are required.
Thermally, the NX3008NBKS,115 specifies thermal resistance and power dissipation limits clearly, though the low current and high R_DS(on) restrict its use in power applications. The CSD17483F4’s higher power dissipation rating (500 mW) and lower on-resistance position it better for small power switching tasks, but thermal management is still critical at or near its current limits. The higher gate drive voltage and charge impact driver selection and power consumption in switching circuits.
Cost at volume is not provided but generally, MOSFET arrays like the NX3008NBKS,115 can reduce BOM and assembly costs for dual-switch applications, while single discrete MOSFETs like the CSD17483F4 may be cheaper per device but require more PCB area and assembly steps for dual configurations.
Use-case fit
Choose NX3008NBKS,115 when…
- You need to switch or multiplex low current signals (≤350 mA) with integrated dual MOSFETs in a compact 6-TSSOP package.
- Operating directly from low-voltage logic or microcontroller outputs without external gate drivers.
- Automotive or industrial environments requiring AEC-Q101 qualification and operation up to 150 °C junction temperature.
- Applications sensitive to gate charge and input capacitance, such as low-frequency switching or low EMI designs.
- Space-constrained designs requiring two N-channel MOSFETs in a single package to reduce PCB footprint and simplify routing.
Choose CSD17483F4 when…
- Your load requires continuous current up to 1.5 A with significantly lower conduction losses due to 240 mΩ R_DS(on).
- You can provide a gate drive voltage up to 12 V and handle the 1.3 nC gate charge for efficient switching.
- Single discrete MOSFET usage is acceptable or preferred, and the PCB layout can accommodate the 3-pin XFDFN package.
- Switching frequencies are moderate, and the higher input capacitance can be managed without excessive losses.