Component Comparison: NX3008NBKS,115 vs C3M0350120D

1. Quick verdict

For low-voltage, low-current switching or level-shifting applications requiring dual MOSFETs in a small footprint and automotive qualification, the NX3008NBKS,115 is the clear choice. Its low gate charge and logic-level gate drive simplify gate driving and reduce switching losses at sub-1A currents.

For high-voltage, high-current power conversion or motor drive applications where blocking voltage and conduction losses dominate, the C3M0350120D outperforms by a wide margin with its 1200 V rating, 7.6 A continuous current, and much lower R_DS(on) at 525 mΩ, enabling more efficient, thermally manageable designs.

2. Spec comparison table

SpecNX3008NBKS,115C3M0350120DNotes
TechnologyMOSFET (Metal Oxide)SiCFET (Silicon Carbide)SiC offers higher voltage and temperature operation, generally better for high power.
Configuration2 N-Channel (Dual)N-ChannelDual MOSFET vs single device; dual useful for half-bridge or complementary circuits.
Drain-Source Voltage (V_DS max)30 V1200 VC3M0350120D supports 40× higher voltage; critical for high-voltage power systems.
Continuous Drain Current (I_D)350 mA @ 25°C7.6 A (Tc)C3M0350120D supports ~20× higher current; NX3008NBKS is for low current loads.
Pulsed Drain Current1.4 A (spiking max)20 AC3M0350120D handles much higher peak currents.
Drain-Source On-Resistance (R_DS(on))1.4 Ω @ 350 mA, 4.5 V (typ)525 mΩ @ 3.6 A, 15 V (typ)C3M0350120D offers ~3× lower R_DS(on) at much higher current; important for conduction losses.
Gate Charge (Q_g)0.68 nC @ 4.5 V (typ)19 nC @ 15 V (max)NX3008NBKS has ~28× lower gate charge, reducing gate drive losses at low voltage.
Input Capacitance (C_iss)50 pF @ 15 V (max)345 pF @ 1000 V (typ)NX3008NBKS has much lower gate capacitance; easier to drive at low voltages/frequencies.
Output Capacitance (C_oss)6.5 pF (typ)20 pF (typ)Lower output capacitance reduces switching losses; NX3008NBKS advantage here.
Reverse Transfer Capacitance (C_rss)2.2 pF (typ)3.4 pF (typ)Lower C_rss reduces Miller effect; NX3008NBKS slightly better.
Gate Threshold Voltage (V_GS(th))0.6–1.1 V (typ/max)2.0 V (typ)NX3008NBKS is logic-level gate; easier to drive from low-voltage logic.
Gate-Source Voltage Max±8 V−4 V to +15 VC3M0350120D supports higher max positive gate voltage, but NX3008NBKS better for 5V logic.
Drain Leakage Current (I_DSS)1 µA @ 25°C, 10 µA @ 150°C (typ)1 µA (typ)Comparable leakage at room temp; NX3008NBKS leakage increases more at 150°C.
Gate Leakage Current (I_GSS)0.2–1 µA typical10 nA (typ), 250 nA (max)C3M0350120D has lower gate leakage, beneficial for ultra-low power gate drive.
Power Dissipation (P_D max)445 mW (max)50 W (Tc)C3M0350120D can dissipate >100× more power; suited for high power applications.
Package Type6-TSSOP (Surface Mount)TO-247-3 (Through Hole)NX3008NBKS is compact SMT; C3M0350120D requires more board space and heatsinking.
Thermal Resistance Junction-to-Case (R_θJC)Not specified2.5 °C/W (typ)C3M0350120D designed for effective heatsinking; NX3008NBKS limited by SMT thermal path.
Operating Temperature Range (T_J)-55°C to +150°C-55°C to +150°CComparable junction temp range.
ESD Rating2000 V (max)Not specifiedNX3008NBKS rated for automotive ESD; C3M0350120D datasheet does not specify.
Switching Times (t_on, t_off)t_turn_on ~15–30 ns, t_turn_off ~69–138 nst_turn_on 25 ns (typ), t_turn_off 14 ns (max)Comparable switching speeds; SiC device faster turn-off, beneficial for hard switching.
Transient Thermal Impedance0.01–1 K/W (varies with time)Not specifiedNX3008NBKS includes detailed transient thermal data; C3M0350120D does not specify here.
QualificationAEC-Q101 (Automotive)None specifiedNX3008NBKS suitable for automotive; C3M0350120D not automotive qualified.
GradeAutomotiveNot specifiedNX3008NBKS targets automotive reliability requirements.

3. Design trade-offs

The NX3008NBKS,115 is a dual 30 V MOSFET array optimized for low current (350 mA continuous) automotive and logic-level applications. Its extremely low gate charge (~0.68 nC) and low input capacitance (50 pF) make it easy to drive directly from 3.3–5 V logic, minimizing gate driver complexity and power loss. The small 6-TSSOP package and dual transistor integration enable compact PCB layouts in space-constrained designs such as level shifters, load switches, or signal multiplexing.

However, the high R_DS(on) of approximately 1.4 Ω at 350 mA means conduction losses rise quickly beyond that current, making this device unsuitable for power switching or load driving above a few hundred milliamps. The thermal dissipation is limited (~445 mW max), and the SMT package limits heat sinking options. Automotive qualification and robust ESD rating make it a reliable choice in harsh environments but not for high power.

The C3M0350120D is a single SiC MOSFET designed for high voltage (1200 V) and high current (7.6 A continuous, 20 A pulsed) applications. Its R_DS(on) of 525 mΩ at 3.6 A is low for a SiC device, enabling significantly improved conduction losses at high currents compared to silicon MOSFETs. The high voltage rating and 50 W power dissipation capability (junction-to-case thermal resistance 2.5 °C/W) require a through-hole TO-247 package and heatsinking, increasing board space and thermal design complexity.

Gate charge is substantially higher (19 nC @ 15 V), necessitating a stronger gate driver and careful gate resistor selection to balance switching speed and EMI. SiC devices have faster switching transitions and lower switching losses, making them advantageous for hard-switching topologies at high voltages. However, the higher gate threshold voltage (~2.0 V) and gate voltage range require compatible gate drivers capable of at least 15 V drive.

From a layout perspective, NX3008NBKS,115 is compact and surface mount, fitting small, dense boards, while C3M0350120D needs substantial copper area and a heatsink for thermal management. Cost-wise, the NX3008NBKS,115 will be significantly cheaper per unit and in volume, reflecting the difference in technology and power rating.

4. Use-case fit

Choose NX3008NBKS,115 when…