NX3008NBKS,115 vs C3M0075120K: Component Comparison
Quick verdict
For low-voltage, low-current switching, such as signal-level load switching or level translation in automotive or industrial control, the NX3008NBKS,115 is the clear choice due to its integrated dual MOSFET array, logic-level gate drive, and automotive qualification. For high-voltage, high-power applications like power conversion at 600–1200 V and 20–30 A loads, the C3M0075120K dominates with its SiC technology, high blocking voltage, and much higher current and power ratings.
Spec comparison table
| Spec | NX3008NBKS,115 | C3M0075120K | Notes |
|---|---|---|---|
| Product URL | Link | Link | N/A |
| Technology | MOSFET (Metal Oxide) | SiCFET (Silicon Carbide) | SiC offers better high-voltage and high-temperature performance |
| Configuration | Dual N-Channel | Single N-Channel | Dual MOSFET array integrates two devices in one package |
| Drain-Source Voltage (max) | 30 V | 1200 V | C3M0075120K supports 40× higher voltage, critical for high-voltage applications |
| Continuous Drain Current @ 25°C | 350 mA | 30 A | C3M0075120K supports ~85× higher continuous current |
| Drain Current Spiking Max | 1.4 A | Not specified | NX3008NBKS,115 supports brief spikes well above continuous current |
| Power Dissipation (max) | 445 mW | 113.6 W (Tc) | C3M0075120K handles ~250× more power dissipation, suitable for high-power circuits |
| R_DS(on) typical @ 25°C | 1.0–1.4 Ω @ 350mA, 4.5 V | 90 mΩ @ 20A, 15V | C3M0075120K has much lower R_DS(on), reducing conduction losses at high current |
| Gate Threshold Voltage (typ) | 0.6–1.1 V | 4 V @ 5 mA | NX3008NBKS,115 is logic-level, easier to drive from low-voltage logic |
| Gate Charge (Q_g) | 0.52–0.68 nC @ 4.5 V | 51 nC @ 15 V | NX3008NBKS,115 requires orders of magnitude less gate charge, enabling faster switching |
| Input Capacitance (C_iss @ typical Vds) | 34–50 pF @ 15 V | 1350 pF @ 1000 V | NX3008NBKS,115 has significantly lower input capacitance, beneficial for high-speed switching |
| Package | 6-TSSOP, SC-88, SOT-363 | TO-247-4L (Through Hole) | NX3008NBKS,115 is small SMT; C3M0075120K is large through-hole, affecting layout size |
| Mounting Type | Surface Mount | Through Hole | SMT preferred for compact designs; through-hole better for heat dissipation |
| Operating Temperature Range (TJ) | -55°C to +150°C | -55°C to +150°C | Both have similar temperature ratings |
| Thermal Resistance Junction-to-Ambient (typ) | 300 K/W (per device) | Not specified | NX3008NBKS,115 has high thermal resistance due to small package |
| ESD Rating | 2000 V | Not specified | NX3008NBKS,115 includes ESD robustness |
| Qualification | AEC-Q101 (Automotive) | None specified | NX3008NBKS,115 is automotive-grade |
| Gate-Source Voltage Max | ±8 V | +19 V / -8 V | C3M0075120K allows higher gate drive voltage, supporting robust switching |
| Transient Thermal Impedance (typ 100ms) | 0.5 K/W | Not specified | Low transient thermal impedance helps NX3008NBKS,115 handle brief power surges |
| Total Power Dissipation (typ) | 280 mW | Not specified | NX3008NBKS,115 rated for low power dissipation typical usage |
Design trade-offs
The NX3008NBKS,115 is a small-signal, low-voltage dual MOSFET array optimized for signal-level switching and low-current loads, typical in automotive and industrial control systems. Its logic-level gate threshold (0.6–1.1 V) and minimal gate charge (~0.6 nC) allow direct control from low-voltage CMOS logic with minimal driver complexity and power consumption. The dual MOSFET array in a compact 6-TSSOP package simplifies board layout when two matched transistors are required in close proximity.
In contrast, the C3M0075120K is a wide-bandgap SiC MOSFET designed for high-voltage (1200 V) and high-current (30 A) power stages, such as power factor correction, DC-DC conversion, or motor drives. Its much higher gate charge (51 nC) and gate threshold voltage (~4 V) necessitate a dedicated gate driver capable of sourcing higher peak currents at 15 V drive to achieve fast switching and minimize losses. The significantly lower R_DS(on) of 90 mΩ at 20 A reduces conduction losses dramatically compared to the NX3008NBKS,115, which has 1–1.4 Ω at 350 mA.
Thermally, the NX3008NBKS,115’s small SMT package with a thermal resistance junction-to-ambient of 300 K/W limits its power dissipation to under 0.5 W, making it unsuitable for continuous high-current loads without additional cooling. The TO-247-4L package of the C3M0075120K supports much higher power dissipation (113.6 W at case temperature), with a metal tab for heat sinking, essential for high-power applications but requiring more board space and mechanical support.
The NX3008NBKS,115’s low input capacitance (34–50 pF) and low gate charge translate to faster switching times and reduced driver power at low voltages, suitable for logic-level switching or load switching in sensitive analog or digital circuits. The C3M0075120K’s high input capacitance (1350 pF) and gate charge increase switching losses and require more careful gate drive design, including fast gate drivers and potentially snubbers to manage switching transients.
Cost-wise, the NX3008NBKS,115 will be much cheaper per unit and per channel, especially in volume, due to its simpler technology and smaller package. The C3M0075120K, as a SiC device in a large power package, commands a premium price justified only by high-voltage, high-power requirements.
Use-case fit
Choose NX3008NBKS,115 when…
- You need a compact, dual low-voltage MOSFET array for switching signals or loads up to a few hundred milliamps.
- Your design requires automotive qualification (AEC-Q101) for harsh environments.
- Gate drive voltage is limited to logic levels (~4.5 V), and low gate charge is critical to minimize driver power consumption.
- PCB area is constrained and surface-mount assembly is preferred.
- Switching frequencies are moderate to high, and low input capacitance improves switching efficiency.
Choose C3M0075120K when…
- Your application requires blocking voltages up to 1200 V, such as in industrial power supplies or EV onboard chargers.
- Continuous currents up to 30 A are expected, with power dissipation over 100 W.
- Efficiency at high current and voltage is critical, leveraging low R_DS(on) and SiC technology.
- You have a robust gate driver capable of delivering 15 V gate drive and handling 51 nC gate charge.
- Thermal management solutions (heat sinks, forced cooling) are available to handle TO-247 package dissipation.
Drop-in compatibility
These two devices are not pin- or footprint-compatible. The NX3008NBKS,115 is a dual MOSFET array in a small 6-TSSOP SMT package, while the C3M0075120K is a single high-power MOSFET in a large through-hole TO-247-4L package. Substituting one for the other would require complete redesign of the PCB footprint, gate drive circuitry, and thermal management. No direct drop-in replacement is possible.
Alternatives to consider
- BSS138 (NXP or ON Semiconductor): A single low-voltage N-channel MOSFET with logic-level gate drive, suitable for low-current switching, but without the integrated dual array or automotive qualification.
- IRLB8721 (Infineon): A logic