NX3008NBKS,115 vs AUIRFZ44N: Component Comparison for Power Electronics Engineers
1. Quick verdict
For low-voltage, low-current switching applications requiring a compact, surface-mount dual MOSFET with logic-level drive and automotive qualification, the NX3008NBKS,115 is the clear choice due to its integrated dual device and low gate charge. For high-current, higher-voltage power stages, such as motor drives or power supplies with through-hole mounting and robust thermal handling, the AUIRFZ44N dominates, offering 49A continuous current at 55V and significantly lower R_DS(on).
2. Spec comparison table
| Spec | NX3008NBKS,115 | AUIRFZ44N | Notes |
|---|---|---|---|
| Product type | Mosfet Array 2x N-Channel Dual | Single N-Channel MOSFET | NX3008NBKS has two MOSFETs in one package; AUIRFZ44N is a single device |
| Drain-source voltage (V_DS max) | 30 V | 55 V | AUIRFZ44N supports almost double voltage, better for higher voltage applications |
| Continuous drain current (I_D @ 25°C) | 350 mA | 49 A (at case temp) | AUIRFZ44N handles over 100x current; NX3008NBKS limited to low current |
| Power dissipation (max) | 445 mW | 94 W (at case temp) | AUIRFZ44N has much higher power dissipation capability |
| Package | 6-TSSOP (surface mount) | TO-220-3 (through hole) | NX3008NBKS is compact surface mount; AUIRFZ44N is larger through-hole |
| Gate charge (Q_g @ V_GS) | 0.68 nC @ 4.5 V | 63 nC @ 10 V | NX3008NBKS has dramatically lower gate charge, hence lower switching losses |
| R_DS(on) (typical @ I_D, V_GS) | 1.4 Ω @ 350 mA, 4.5 V | 17.5 mΩ @ 25 A, 10 V | AUIRFZ44N has orders of magnitude lower on-resistance, critical for efficiency at high current |
| Gate threshold voltage (V_GS(th)) | 0.6–1.1 V (typ) | 4 V @ 250 µA | NX3008NBKS is logic-level gate, easier to drive from low-voltage logic |
| Input capacitance (C_iss) | 34–50 pF (typ) | 1470 pF @ 25 V | NX3008NBKS has much lower input capacitance, reducing gate drive current |
| Output capacitance (C_oss) | 6.5 pF (typ) | Not specified | Lower output capacitance reduces switching losses; NX3008NBKS favored |
| Reverse transfer capacitance (C_rss) | 2.2 pF (typ) | Not specified | Lower C_rss reduces Miller effect; NX3008NBKS better here |
| ESD rating | 2000 V | Not specified | NX3008NBKS has defined ESD rating, helpful in sensitive designs |
| Ambient temperature range | -55 °C to +150 °C | -55 °C to +175 °C | AUIRFZ44N supports higher max temperature |
| Thermal resistance (junction to ambient) | 300 K/W (device typical) | Not specified | NX3008NBKS has high thermal resistance typical of small SMT package |
| Transient thermal impedance (typical) | ~0.5 K/W (100 ms) | Not specified | NX3008NBKS transient thermal impedance data provided; AUIRFZ44N data lacking |
| Max gate-source voltage (V_GS max) | ±8 V | ±20 V | AUIRFZ44N tolerates higher gate drive voltages |
| Mounting type | Surface Mount | Through Hole | Different mounting styles affect assembly and thermal management |
| Qualification | AEC-Q101 | AEC-Q101 | Both suitable for automotive use |
| Number of channels | 2 (dual) | 1 | NX3008NBKS integrates two MOSFETs, useful for half-bridge or complementary switching |
| Drain current spiking max | 1.4 A | Not specified | NX3008NBKS supports brief spike currents ~4x nominal |
| Gate leakage current (typ) | 0.2 µA @ 25 °C | Not specified | NX3008NBKS low gate leakage reduces static power losses |
| Gate drive voltage for R_DS(on) rating | 4.5 V | 10 V | NX3008NBKS designed for logic-level drive; AUIRFZ44N requires higher gate voltage |
3. Design trade-offs
The NX3008NBKS,115 and AUIRFZ44N serve fundamentally different roles in power electronics despite both being N-channel MOSFETs. The NX3008NBKS is a dual, low-voltage, low-current MOSFET array optimized for signal switching or low-power loads, packaged in a tiny 6-TSSOP surface-mount package. Its logic-level gate threshold (~0.6–1.1 V) and extremely low gate charge (~0.68 nC at 4.5 V) minimize gate drive losses and simplify direct MCU or low-voltage gate drive interfacing. However, its high R_DS(on) (~1.4 Ω at 350 mA) and low current rating limit it to sub-amp applications. Its thermal resistance (~300 K/W) and low power dissipation (445 mW max) further restrict it to low power or signal-level switching.
In contrast, the AUIRFZ44N is a power MOSFET intended for high-current, medium-voltage switching, capable of 49 A continuous current and 55 V drain-source voltage, housed in a through-hole TO-220 package with robust thermal dissipation (94 W max at case temperature). Its low R_DS(on) of 17.5 mΩ at 25 A and 10 V gate drive makes it suitable for power stages where conduction losses matter. The trade-off is a significantly higher gate charge (~63 nC at 10 V), which demands a stronger gate driver and more careful gate drive waveform design to avoid switching losses and EMI. The AUIRFZ44N requires a 10 V gate drive for rated R_DS(on), incompatible with direct logic-level drive.
From a layout perspective, the NX3008NBKS’s small package and dual MOSFET structure simplify compact PCB designs for low-power switching but limit heat sinking options. The AUIRFZ44N’s through-hole TO-220 package enables direct heatsink mounting, improving thermal performance for high-power applications but increases PCB real estate and assembly complexity. The AUIRFZ44N’s higher gate voltage rating (±20 V vs ±8 V) offers more gate drive margin, useful in noisy automotive environments.
Cost at volume tends to favor the NX3008NBKS for low-power, space-constrained designs due to integration and SMT assembly, while the AUIRFZ44N remains cost-effective for power stages requiring high current and robust thermal handling, especially where through-hole parts are standard for heat dissipation.
4. Use-case fit
Choose NX3008NBKS,115 when:
- You need dual N-channel MOSFETs in a compact 6-TSSOP package for low-current (≤350 mA) signal switching or load control.
- Your design operates at or below 30 V and requires logic-level gate drive (1.75 V threshold, gate drive voltage ≤4.5 V).
- Minimizing gate drive power consumption and EMI is critical, benefiting from the very low gate charge (0.68 nC).
- Automotive qualification (AEC-Q101) is mandatory for low-power signal-level MOSFET arrays.
- Space constraints dictate surface-mount components with small PCB footprint and low thermal dissipation requirements.
Choose AUIRFZ44N when:
- Your application requires high continuous current (up to 49 A) and/or voltages up to 55 V, such as motor controllers or power supplies.
- You can provide a 10 V gate drive to achieve low R_DS(on) (17.5 mΩ), minimizing conduction losses at high current.
- Thermal management involves heatsinks or chassis mounting enabled by the TO-220 through-hole package.
- The design tolerates larger PCB footprint and through-hole assembly for improved robustness and heat dissipation.
- Automotive-grade qualification is required for power MOSFETs handling significant load currents.
5. Drop-in compatibility
The NX3008NBKS,115 and AUIRFZ44N are not pin-compatible nor footprint-compatible. NX3008NBKS is a dual MOSFET array in a 6-TSSOP surface-mount package with small pins and a different pinout, while the AUIRFZ44N is