Comparison: NX3008NBKS,115 vs 2SK3019TL MOSFETs
Quick verdict
For low-current switching and analog multiplexing in compact surface-mount designs, the NX3008NBKS,115 is superior due to its dual N-channel array, logic-level gate drive, and automotive-grade qualification. The 2SK3019TL is better suited for very low current, low power switching where gate voltage swings up to ±20 V are available and minimal input capacitance is critical.
Spec comparison table
| Spec | NX3008NBKS,115 | 2SK3019TL | Notes |
|---|---|---|---|
| Configuration | Dual N-Channel MOSFET | Single N-Channel MOSFET | Dual array enables compact dual-switch designs with fewer components (NX3008NBKS wins). |
| Drain-Source Voltage (max) | 30 V | 30 V | Equal rating. |
| Continuous Drain Current (Id) @ 25°C | 350 mA | 100 mA | NX3008NBKS supports 3.5× higher continuous current. |
| Power Dissipation (max @ Ta) | 445 mW | 150 mW | NX3008NBKS has nearly 3× higher dissipation capacity, allowing higher continuous power. |
| Rds(on) Typ @ 25°C, Id, Vgs | 1.0 – 1.4 Ω @ 350mA, 4.5 V | 8 Ω @ 10mA, 4 V | NX3008NBKS has substantially lower on-resistance at higher current, reducing conduction loss. |
| Gate Threshold Voltage (Vgs_th max) | 0.6 – 1.1 V @ 250µA | 1.5 V @ 100µA | NX3008NBKS turns on at lower gate voltage, better for logic-level drive. |
| Gate-Source Voltage (max) | ±8 V | ±20 V | 2SK3019TL tolerates higher gate voltages; NX3008NBKS limited to ±8 V. |
| Input Capacitance (Ciss) | 34 – 50 pF (typ/max) @ 25°C, 15 V | 13 pF @ 5 V | 2SK3019TL has ~3× lower input capacitance, beneficial for high-speed or low-drive current. |
| Output Capacitance (Coss) | 6.5 pF (typ) | Not specified | NX3008NBKS data only; likely similar scale. |
| Reverse Transfer Capacitance (Crss) | 2.2 pF (typ) | Not specified | NX3008NBKS data only. |
| Gate Charge (Qg) | 0.52 – 0.68 nC @ 4.5 V | Not specified | NX3008NBKS low gate charge aids switching efficiency; no data for 2SK3019TL. |
| Drain Leakage Current (Idss) @ 25°C | 1 µA (typ) | Not specified | NX3008NBKS low leakage confirmed. |
| Operating Temperature Range | -55°C to +150°C (TJ) | Up to +150°C (TJ) | NX3008NBKS guaranteed down to -55°C ambient; 2SK3019TL unspecified bottom range. |
| Package | 6-TSSOP (Dual MOSFET) | SC-75 (SOT-416) | Different package types; NX3008NBKS smaller footprint for dual transistors. |
| Mounting Type | Surface Mount | Surface Mount | Equal. |
| ESD Rating | 2000 V | Not specified | NX3008NBKS has specified ESD robustness. |
| Transient Thermal Impedance (typ) per transistor | 390 – 445 K/W | Not specified | NX3008NBKS thermal impedance known; 2SK3019TL data not given. |
| Total Power Dissipation (typ) | 280 mW | Not specified | NX3008NBKS typical power dissipation documented. |
| Drive Voltage for Rds(on) Specified | 4.5 V | 2.5 V and 4 V | 2SK3019TL specifies Rds(on) at 2.5 V and 4 V, lower gate drive possible but with high Rds(on). |
| Drain Current Spiking Max | 1.4 A | Not specified | NX3008NBKS supports short spikes up to 1.4 A, useful for transient loads. |
Design trade-offs
The NX3008NBKS,115 is designed as a dual N-channel MOSFET array with logic-level gate drive, making it a good choice for switching loads driven directly from 3.3 V or 5 V logic. Its 350 mA continuous current rating and low typical Rds(on) of 1–1.4 Ω at 4.5 V gate drive mean conduction losses are moderate at low to medium currents. The dual device in a compact 6-TSSOP package reduces component count and board space for applications requiring two switches or half-bridge configurations.
In contrast, the 2SK3019TL is a single N-channel MOSFET with a significantly lower continuous current rating of 100 mA and a much higher on-resistance of 8 Ω at 10 mA with 4 V gate drive. This limits its use to low-current analog switching or signal-level applications rather than power switching. However, its input capacitance is about 13 pF, roughly one-third that of the NX3008NBKS, reducing gate drive charge and enabling faster switching or lower drive power in very low-current circuits.
Thermally, the NX3008NBKS can dissipate nearly three times the power of the 2SK3019TL (445 mW vs 150 mW), enabling operation in higher power environments or with less aggressive thermal management. The NX3008NBKS’s specified transient thermal impedance also aids in designing for short pulses or switching transients. The 2SK3019TL lacks detailed thermal data, necessitating conservative derating.
Gate voltage tolerance is another trade-off: the NX3008NBKS is limited to ±8 V gate-source voltage, so it requires logic-level drivers and care to avoid overvoltage. The 2SK3019TL supports up to ±20 V on the gate, allowing use in circuits with higher gate drive voltages but at the cost of higher on-resistance and lower current capability.
From a layout standpoint, the NX3008NBKS’s dual devices and small 6-TSSOP package (2.2 mm × 1.35 mm) facilitate compact designs but require careful thermal and parasitic inductance management due to the small package and relatively high Rds(on). The 2SK3019TL’s SC-75 package is physically smaller but is only single device and limited to very low current loads.
Cost-wise, the NX3008NBKS is automotive qualified (AEC-Q101), which generally commands a higher price but assures reliability in harsh environments. The 2SK3019TL lacks such qualification and targets less demanding commercial applications.
Use-case fit
Choose NX3008NBKS,115 when…
- You need two N-channel MOSFETs in a single compact package for switching or load control in 30 V systems with currents up to 350 mA.
- Operating from 3.3 V or 5 V logic-level signals without additional gate drive circuitry.
- Automotive or industrial environments requiring AEC-Q101 qualification and extended temperature range (-55°C to +150°C).
- Applications demanding moderate power dissipation (up to 445 mW) and transient current spikes up to 1.4 A.
- Designs where dual-switch configuration reduces BOM and PCB area, such as half-bridge drivers or multiplexers.
Choose 2SK3019TL when…
- The application involves very low current switching (≤100 mA) with tight constraints on input capacitance for high-speed or low-drive circuits.
- Gate driver voltages up to ±20 V are available and higher gate voltage tolerance is required.
- Single low-current switch is needed in a small SC-75 package footprint.
- Cost-sensitive commercial applications where automotive qualification is not required.
- Analog signal switching or buffering with minimal gate charge and leakage current considerations.
Drop-in compatibility
These devices are not pin-compatible. The NX3008NBKS,115 is a dual MOSFET array in a 6-TSSOP package with a different pinout and package outline compared to the single-transistor SC-75 (SOT-416) package of the 2SK3019TL. Substituting one for the other requires redesign of the PCB footprint and potentially the gate drive and load circuitry, particularly due to the different device counts and electrical characteristics.
Alternatives to consider
- BSS138: Single N-channel logic-level MOSFET with low gate charge and Rds(on) ~3.5 Ω at 5 V; widely used for low-power switching.
- 2N7002: N-channel MOSFET with 60 V rating, ~1.8 Ω Rds(on) at 10 V gate, suitable for general-purpose low voltage switching.
- Si2301: Single N-channel MOSFET with low