NX3008NBKS,115 vs 2N7002PS,115 MOSFET Arrays: Detailed Component Comparison

Quick verdict

For low-voltage switching applications with limited current requirements (under 350mA) and tight thermal margins, the NX3008NBKS,115 offers lower gate charge and slightly better on-resistance, making it preferable for efficient, thermally constrained circuits. In contrast, the 2N7002PS,115 supports higher voltage (60V) and thus suits designs requiring wider voltage headroom or higher voltage transients at similar current levels, despite its higher gate threshold and slightly higher R_DS(on).

Spec comparison table

SpecNX3008NBKS,1152N7002PS,115Notes
Configuration2 N-Channel (Dual)2 N-Channel (Dual)Identical.
Drain-Source Voltage, V_DS max30 V60 V2N7002PS doubles voltage rating, better for higher voltage margins.
Continuous Drain Current, I_D @ 25°C350 mA320 mANX3008NBKS has slightly higher continuous current rating.
Drain Current Spiking Max1.4 ANot specifiedNX3008NBKS specifies 1.4 A spike capability, useful for transient loads.
R_DS(on) Typ @ 25°C1.0 – 1.4 Ω @ 350mA, 4.5V1.6 Ω @ 500mA, 10VNX3008NBKS has lower R_DS(on) at lower V_GS; 2N7002PS tested at higher current & gate voltage. Lower R_DS(on) at relevant gate drive is better.
Gate Threshold Voltage, V_GS(th) Typ0.6 – 1.1 V (typ) @ 250µA2.4 V @ 250µANX3008NBKS has significantly lower V_GS(th), easier to fully turn on with logic-level signals.
Gate Charge Q_g @ 4.5V max0.68 nC0.8 nCNX3008NBKS slightly lower gate charge, reducing gate drive losses.
Input Capacitance C_ISS typ @ 25°C34 – 50 pF (max @ 15V)50 pF (max @ 10V)Comparable input capacitance; NX3008NBKS rated at higher V_DS test condition.
Output Capacitance C_OSS typ6.5 pFNot specifiedNX3008NBKS provides output capacitance data, useful for switching loss calculations.
Reverse Transfer Capacitance C_RSS typ2.2 pFNot specifiedNX3008NBKS data available; lower C_RSS reduces Miller effect in switching.
Power Dissipation max445 mW420 mWNX3008NBKS has slightly higher max power dissipation.
Package6-TSSOP (SOT-363)6-TSSOP (SOT-363)Identical package and footprint.
Operating Temperature Range-55°C to +150°C-55°C to +150°CSame temperature range, suitable for automotive grade applications.
ESD Rating2000 VNot specifiedNX3008NBKS rated for 2kV ESD, better for robust handling.
Thermal Resistance Junction-to-Ambient per Device (typ)300 K/WNot specifiedNX3008NBKS provides detailed thermal data; 300 K/W is fairly high, suggesting limited power dissipation in open air.
Gate Leakage Current typ @ 25°C0.2 – 1 µANot specifiedNX3008NBKS specs gate leakage, useful for low-power designs.
Grade / QualificationAutomotive, AEC-Q101Automotive, AEC-Q100Both qualified for automotive, though slightly different standards (Q101 vs Q100).
Gate Source Voltage Max/Min±8 VNot specifiedNX3008NBKS specifies ±8 V limits, useful for gate drive design.
Rise / Fall / Turn-on / Turn-off timesRise: 11 ns, Fall: 19 ns, Turn-on delay: 15-30 ns, Turn-off delay: 69-138 nsNot specifiedNX3008NBKS datasheet provides switching speed data, useful for timing-critical designs.
Transient Thermal Impedance0.01 – 1 K/W (various times)Not specifiedNX3008NBKS transient thermal data enables better transient thermal modeling.

Design trade-offs

The NX3008NBKS,115 and 2N7002PS,115 share the same form factor and basic dual N-channel MOSFET configuration, but differ primarily in voltage rating, gate threshold voltage, on-resistance, and switching characteristics.

The 2N7002PS doubles the voltage rating to 60 V, which is significant if your design encounters voltage spikes, inductive kickback, or higher supply voltages. However, this comes at the cost of a higher gate threshold voltage (2.4 V typical vs ~1 V for NX3008NBKS), which means the MOSFET requires a stronger gate drive to fully turn on. This can complicate interfacing with low-voltage logic or microcontrollers running at 3.3 V or below, possibly requiring a dedicated driver or level shifter.

On-resistance is a key factor in conduction losses and, therefore, efficiency and thermal dissipation. The NX3008NBKS shows a typical R_DS(on) of 1.0–1.4 Ω at 4.5 V gate drive and 350 mA drain current, whereas the 2N7002PS is specified at 1.6 Ω at a higher 10 V gate drive and 500 mA current. Since the 2N7002PS requires a higher gate voltage to achieve low R_DS(on), it is less efficient in low-voltage gate drive environments. For switching applications under logic-level drive, the NX3008NBKS will generally be more energy efficient.

Switching speeds and gate charge also favor the NX3008NBKS, which has a slightly lower gate charge (0.68 nC vs 0.8 nC at 4.5 V). While the difference is modest, it can translate into lower switching losses and reduced EMI in high-frequency circuits.

Thermally, both devices have similar power ratings (~420–445 mW max) and operate over the same temperature range (-55°C to +150°C). The NX3008NBKS provides more detailed thermal resistance and transient thermal impedance data, supporting better thermal design and reliability assessment. However, the high junction-to-ambient thermal resistance (~300 K/W) indicates that these devices must rely on PCB copper and airflow for heat dissipation; they are not suitable for high-current or high-power dissipation without additional thermal management.

From a layout perspective, both parts share the 6-TSSOP package and footprint, so board-level changes are minimal if substituting, but the higher gate threshold and voltage rating of the 2N7002PS may require different gate drive considerations.

Cost at volume often aligns with the technology and qualification. Both are automotive grade with similar packaging; however, the 2N7002PS’s higher voltage rating might carry a small premium. Pricing should be reviewed case-by-case.

Use-case fit

Choose NX3008NBKS,115 when…

Choose 2N7002PS,115 when…

Drop-in compatibility

Both devices share the 6-TSSOP (SOT-363) package and dual N-channel configuration, suggesting footprint and pin compatibility. The datasheets do not explicitly confirm pin-to-pin