NX3008NBKS,115 vs 2N7002-G MOSFETs: Component Comparison for Hardware Designers
1. Quick verdict
For low-current dual-switch applications in automotive or harsh environments requiring AEC-Q101 qualification and tight thermal margins, the NX3008NBKS,115 is the preferred choice due to its dual MOSFET array, higher continuous current rating, and automotive-grade qualification. For cost-sensitive, general-purpose switching under higher voltage (up to 60 V) and moderate current (up to 115 mA) in space-constrained designs, the 2N7002-G offers a simpler single MOSFET solution with a smaller footprint and higher voltage rating.
2. Spec comparison table
| Spec | NX3008NBKS,115 | 2N7002-G | Notes |
|---|---|---|---|
| Configuration | Dual N-Channel MOSFET | Single N-Channel MOSFET | Dual device enables half-bridge or complementary switching; single device is simpler. |
| Package | 6-TSSOP (2.2 mm × 1.35 mm) | SOT-23 (TO-236AB, 2.90 mm × 1.30 mm) | SOT-23 smaller footprint but single MOSFET only. |
| Drain-Source Voltage (Vds max) | 30 V | 60 V | 2N7002-G supports double the voltage, better for higher voltage rails. |
| Continuous Drain Current (Id) | 350 mA (typ/min/max) | 115 mA (Tj max) | NX3008NBKS,115 supports ~3× higher continuous current. |
| Maximum Drain Current (pulsed/spiking) | 1.4 A (max) | 500 mA (max) | NX3008NBKS,115 supports higher transient current. |
| On-Resistance Rds(on) @ Id, Vgs | 1.4 Ω @ 350 mA, 4.5 V (max) | 7.5 Ω @ 500 mA, 10 V (max) | NX3008NBKS,115 has significantly lower Rds(on) at comparable currents and logic-level Vgs. |
| Gate Threshold Voltage (Vgs_th) | 0.6–1.1 V (typ ~0.9 V) | 1.0 V (typ) | NX3008NBKS,115 is slightly lower threshold, easier to drive at low voltages. |
| Gate-Source Voltage (max) | ±8 V | ±30 V | 2N7002-G can tolerate higher gate voltages, useful in some driver topologies. |
| Gate Charge (Qg) | 0.52–0.68 nC @ 4.5 V (typ) | Not specified | NX3008NBKS,115 has very low gate charge, beneficial for fast switching and low gate drive. |
| Input Capacitance (Ciss) | 34–50 pF (typ/max) | 50 pF @ 25 V (max) | Comparable input capacitance; low gate charge of NX3008NBKS favors lower switching losses. |
| Output Capacitance (Coss) | 6.5 pF (typ) | 25 pF (min) | NX3008NBKS,115 has lower output capacitance, reducing switching losses. |
| Reverse Transfer Capacitance (Crss) | 2.2 pF (typ) | Not specified | NX3008NBKS,115 likely better for switching speed and lower Miller effect. |
| Power Dissipation (Pd max) | 445 mW (typ), 990 mW (max) | 360 mW (max) | NX3008NBKS,115 supports higher power dissipation, better for thermally stressed designs. |
| Operating Temperature Range (TJ) | -55 °C to +150 °C | -55 °C to +150 °C | Both are capable of automotive temperature ranges. |
| ESD Rating | 2000 V (max) | Not specified | NX3008NBKS,115 offers better ESD robustness. |
| Forward Transconductance (gm) | 310 mS (typ) | 80 mS (min) | NX3008NBKS,115 has higher transconductance, indicating higher gain and efficiency. |
| Leakage Current (Idss) @ 25 °C | 1 µA (typ) | Not specified | NX3008NBKS,115 has low leakage current, beneficial for low standby power. |
| Reverse Recovery Time | Not specified | 400 ns (min) | 2N7002-G datasheet specifies reverse recovery time; NX3008NBKS does not. |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 390–445 K/W (per transistor) | 203 °C/W (typ) | 2N7002-G package has lower thermal resistance, potentially better heat dissipation. |
| Grade/Qualification | Automotive (AEC-Q101) | None | NX3008NBKS,115 is qualified for automotive, better reliability in harsh conditions. |
3. Design trade-offs
The NX3008NBKS,115 is a dual N-channel MOSFET array optimized for automotive-grade applications requiring robust operation over wide temperature ranges (-55 °C to 150 °C) and enhanced ESD tolerance (2 kV). Its 6-TSSOP package is compact but larger than the 2N7002-G’s SOT-23, trading off footprint for dual-device integration. The dual MOSFET configuration is advantageous for half-bridge or complementary switch topologies, reducing component count and board complexity.
In terms of electrical performance, the NX3008NBKS,115 supports a continuous drain current of 350 mA with a low Rds(on) around 1.4 Ω at 4.5 V gate drive, significantly lower than the 2N7002-G’s 7.5 Ω at 10 V, which means substantially lower conduction losses in the NX3008NBKS,115 at comparable or even lower gate voltages. The gate charge is also very low (~0.6 nC), which reduces gate drive power and switching losses, important for high-frequency switching or battery-powered systems.
The 2N7002-G, meanwhile, offers a much higher voltage rating at 60 V, nearly double that of the NX3008NBKS,115’s 30 V rating, making it a better fit for higher voltage rails or systems that may experience voltage spikes beyond 30 V. However, the continuous current rating is limited to 115 mA at junction temperature, and the on-resistance is significantly higher, which leads to higher conduction losses and potentially more heat dissipation in continuous conduction applications. Its SOT-23 package has a lower thermal resistance (typical 203 °C/W) compared to the high thermal resistance per transistor in the NX3008NBKS,115 (390–445 K/W), which partially offsets the lower power rating but does not overcome the fundamental conduction loss difference.
Gate drive voltage tolerance is a practical consideration: NX3008NBKS,115 gates are rated for ±8 V, which fits well with standard 3.3 V or 5 V logic but requires caution if driving from higher voltages. The 2N7002-G’s ±30 V gate tolerance provides more flexibility in mixed-voltage or legacy driver environments but comes at the cost of higher threshold voltage and gate leakage.
Thermally, the NX3008NBKS,115 has a higher maximum power dissipation (up to 990 mW total device) and is designed for automotive-grade reliability, making it more suitable for applications demanding long-term stability and robustness. The 2N7002-G’s rating at 360 mW limits it to lower power dissipation scenarios, although its lower thermal resistance package makes it easier to cool in well-ventilated designs.
Cost and availability may favor the 2N7002-G in volume consumer or general-purpose electronics due to its simplicity and widespread use, while the NX3008NBKS,115’s automotive qualification and dual-device integration justifies a higher cost in safety- or reliability-critical designs.
4. Use-case fit
Choose NX3008NBKS,115 when…
- You need a dual N-channel MOSFET array for half-bridge or complementary switching without adding discrete devices.
- Operating environment demands automotive qualification (AEC-Q101) and high ESD robustness (2 kV).
- Your design requires continuous drain currents up to 350 mA with low conduction losses at 4.5 V gate drive.
- Thermal dissipation around 445 mW or higher is expected, and you need reliable operation up to 150 °C junction temperature.
- Low gate charge to minimize gate drive losses in switching applications at moderate frequencies (<1 MHz).
Choose 2N7002-G when…
- You need a single N-channel MOSFET with a higher voltage rating (60 V) for switching in 24 V or 48 V systems.
- Board space is constrained, and the smaller SOT-23 package footprint (2.9 mm × 1.3 mm) is critical.
- Your application involves low to moderate current switching (<115 mA continuous) where conduction loss is less critical.
- You require