NX3008CBKS,115 vs DMG3402L-7 MOSFET Comparison
Quick verdict
For low-voltage, low-current switching applications requiring both N- and P-channel devices in a compact, automotive-grade package, the NX3008CBKS,115 is the better choice due to its integrated dual complementary MOSFETs and logic-level gate drive. For single N-channel switching at higher current (up to 4A) with low on-resistance and higher power dissipation, the DMG3402L-7 outperforms thanks to its significantly lower R_DS(on) and higher current rating.
Spec comparison table
| Spec | NX3008CBKS,115 | DMG3402L-7 | Notes |
|---|---|---|---|
| Configuration | N and P-Channel | N-Channel only | NX3008CBKS,115 supports complementary pairs, useful for half-bridge or push-pull circuits. |
| Continuous drain current @ 25°C | 350mA (N), 200mA (P) | 4A | DMG3402L-7 supports an order of magnitude higher current, suitable for higher power loads. |
| Drain-source voltage max | 30V | 30V | Equal rating, no advantage. |
| Gate drive feature | Logic Level Gate | Not specified | NX3008CBKS,115 optimized for low-voltage gate drive (~4.5V), better for low-voltage logic. |
| Gate charge Qg max | 0.68 nC @ 4.5V | 11.7 nC @ 10V | NX3008CBKS,115 has much lower gate charge, improving switching speed and drive efficiency. |
| Grade | Automotive (AEC-Q101) | None specified | NX3008CBKS,115 is qualified for automotive, implying higher reliability standards. |
| Input capacitance C_iss max | 50 pF @ 15V | 464 pF @ 15V | NX3008CBKS,115 has an order of magnitude lower input capacitance, easing gate drive. |
| Mounting type | Surface Mount | Surface Mount | Equivalent. |
| Operating temperature range | -55°C to 150°C (TJ) | -55°C to 150°C (TJ) | Equivalent. |
| Package case | 6-TSSOP | SOT-23-3 | Different footprint and pin count; impacts PCB layout and density. |
| Max power dissipation | 445 mW | 1.4 W | DMG3402L-7 can dissipate over 3x the power, better for higher thermal loads. |
| Qualification | AEC-Q101 | None specified | NX3008CBKS,115 meets automotive qualification, important for harsh environments. |
| R_DS(on) max @ Id, Vgs | 1.4 Ω @ 350mA, 4.5V | 52 mΩ @ 4A, 10V | DMG3402L-7 has dramatically lower R_DS(on), reducing conduction losses for high currents. |
| V_GS(th) max @ Id | 1.1V @ 250µA | 1.4V @ 250µA | NX3008CBKS,115 has slightly lower threshold voltage, easier to turn on at low gate voltages. |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Equivalent. |
Design trade-offs
The most fundamental difference lies in the intended application space: the NX3008CBKS,115 is a dual complementary MOSFET array optimized for low-current, low-voltage logic-level switching, whereas the DMG3402L-7 is a single high-current N-Channel MOSFET designed for higher power loads.
The NX3008CBKS,115’s extremely low gate charge (0.68 nC at 4.5V) and low input capacitance (50 pF) translate to minimal gate driver power consumption and faster switching at low voltages, making it ideal for battery-powered or automotive logic circuits where gate drive energy is at a premium. Its complementary N and P channels in a single 6-TSSOP package also simplify board layout for half-bridge or push-pull stages, reducing component count and improving matching.
In contrast, the DMG3402L-7’s much higher current capability (4A vs. 350mA max) and substantially lower R_DS(on) (52 mΩ vs. 1.4 Ω) mean it can handle higher power and deliver significantly lower conduction losses in medium-current applications. However, this comes at the cost of a higher gate charge (11.7 nC at 10V) and input capacitance (464 pF), requiring a stronger gate driver and potentially increasing switching losses at high frequencies. Its maximum power dissipation rating (1.4 W) also supports higher thermal loads, but this requires careful thermal management given the small SOT-23 package.
Thermally, the NX3008CBKS,115’s 445 mW rating limits it to low power dissipation scenarios, while the DMG3402L-7’s 1.4 W rating and lower conduction losses make it suitable for more demanding loads, provided the PCB design supports adequate heat sinking. The automotive qualification of the NX3008CBKS,115 also suggests superior robustness under temperature cycling and ESD, which is a crucial consideration in automotive or industrial environments.
Cost-wise, MOSFET arrays like the NX3008CBKS,115 generally reduce BOM and assembly costs by integrating two devices into one package, but the single DMG3402L-7 will likely be cheaper per unit and simpler if only one N-channel device is needed. The difference in package type and pin count should also be factored into layout constraints and density requirements.
Use-case fit
Choose NX3008CBKS,115 when…
- You need a complementary MOSFET pair (N and P channel) in a single package for half-bridge drivers or low-side/high-side switching in automotive or low-voltage logic circuits.
- The load current is under 350 mA (N-channel) or 200 mA (P-channel), and efficiency gains from very low gate charge and input capacitance are important.
- Operating in harsh environments requiring AEC-Q101 qualification and a wide junction temperature range (-55°C to 150°C).
- You require a logic-level gate drive MOSFET operating comfortably at 4.5 V gate drive voltage.
- PCB space is constrained but two complementary devices are required, reducing component count and layout complexity.
Choose DMG3402L-7 when…
- You need to switch or drive loads up to 4A continuously, e.g., medium-power DC-DC converters, load switches, or motor drivers.
- Low conduction losses are critical; the 52 mΩ R_DS(on) at 4A and 10V gate drive enable higher efficiency.
- Higher power dissipation (~1.4W) capability is needed with appropriate thermal management.
- Your design has a dedicated gate driver capable of delivering higher gate charge (11.7 nC at 10V) without compromising switching speed.
- You only require a single N-channel MOSFET in a compact SOT-23 package for simple switching applications.
Drop-in compatibility
These two parts are not pin- or footprint-compatible. The NX3008CBKS,115 is a 6-pin TSSOP package containing both N- and P-channel MOSFETs arranged as a complementary pair, while the DMG3402L-7 is a 3-pin SOT-23 N-channel MOSFET. Substituting one for the other requires redesign of the PCB footprint and potentially the driver circuitry due to different gate drive voltages and current capabilities. No direct drop-in substitution is possible without layout and schematic changes.
Alternatives to consider
- BSS138: A widely used logic-level N-channel MOSFET with low gate charge and low R_DS(on) for low-current switching, useful when a single MOSFET is sufficient at low cost.
- Si2302DS: N-channel MOSFET with similar voltage and current ratings, but often with lower R_DS(on) and gate charge optimized for battery-powered applications.
- IRLML2502: Logic-level N-channel MOSFET with low R_DS(on) and gate charge, suitable for low to medium current loads in portable devices.