MCP1402T-E/OT vs STGAP2SICSC: Gate Driver IC Comparison
Quick verdict
For straightforward low-side MOSFET or IGBT gate drive in compact, cost-sensitive designs running at moderate voltage and current (up to 500mA peak), the MCP1402T-E/OT is the practical choice due to its simplicity, small SOT-23 footprint, and broad supply range. For isolated gate driving requiring high peak output current (up to 4A), galvanic isolation, and operation in high-voltage or safety-critical environments, the STGAP2SICSC is the clear winner, despite larger size and more complex layout requirements.
Spec comparison table
| Spec | MCP1402T-E/OT | STGAP2SICSC | Notes |
|---|---|---|---|
| Channel type | Single | Single | Both single-channel drivers. |
| Peak output current source/sink | 500mA / 500mA | 4A / 4A | STGAP2SICSC provides 8x higher peak current, enabling faster switching of large MOSFETs/IGBTs. |
| Driven configuration | Low-Side | Not explicitly stated (isolated driver) | MCP1402T-E/OT is low-side only, STGAP2SICSC is isolated (capacitive coupling). |
| Gate type supported | IGBT, N/P-channel MOSFET | Not explicitly stated | MCP1402T-E/OT supports typical power transistors; ST device designed for MOSFETs, but details sparse. |
| Input type | Non-inverting | TTL/CMOS with hysteresis (3.3V to 5V) | STGAP2SICSC input compatible with 3.3/5V logic, MCP1402T-E/OT VIH=2.4V typical. |
| Logic voltage V_IL / V_IH | 0.8V / 2.4V | 0.33·VDD / 0.66·VDD (typ) | STGAP2SICSC input thresholds scale with supply voltage, more flexible input interface. |
| Supply voltage | 4.5V ~ 18V | 3V ~ 5.5V (logic), 14.6V turn-on threshold | MCP1402T-E/OT supports wide supply range; ST device logic supply limited to 5.5V, but gate supply up to 26V. |
| Operating temperature range | -40°C ~ 150°C (TJ) | -40°C ~ 125°C | MCP1402T-E/OT supports higher max junction temperature. |
| Package | SOT-23-5 (SC-74A) | 8-SOIC (7.5mm width) | MCP1402T-E/OT smaller footprint, better for space-constrained designs. |
| Rise / Fall time (typical) | 19ns / 15ns | 30ns / 30ns | MCP1402T-E/OT switches faster, beneficial for high-frequency switching with lower losses. |
| Isolation voltage | None | 5000 Vrms | STGAP2SICSC offers galvanic isolation suitable for high-voltage domains; MCP1402T-E/OT has none. |
| Common mode transient immunity | Not specified | ≥ 100 V/ns | ST device handles high dv/dt environments better. |
| Supply current (standby) | Not specified | 65 µA max, 400 µA min | STGAP2SICSC standby currents specified; low standby current beneficial for power saving. |
| Propagation delay (typ) | Not specified | 75 ns (on/off typical) | STGAP2SICSC has longer propagation delay, may impact timing in fast switching applications. |
| Maximum switching frequency | Not specified | 1 MHz (typical) | ST device rated for 1 MHz switching frequency. |
| Clamp short-circuit current max | Not specified | 5 A | STGAP2SICSC includes clamp feature for short-circuit protection, useful in rugged applications. |
| Package length | Not specified (SOT-23 typical) | 2.64 mm (typ) | ST package physically larger, impacts PCB layout. |
| Package width | ~2.9 mm (typical SOT-23) | 7.5 mm | MCP1402T-E/OT much smaller footprint. |
| Operating junction temperature max | 150°C | 125°C | MCP1402T-E/OT supports higher junction temp. |
| Storage temperature range | Not specified | -50°C to 150°C | ST device storage temp wider on low end. |
| Input bias current max | Not specified | 70 µA | ST device input bias current low, reducing input drive requirements. |
| Input pull-down resistor | Not specified | 100 kΩ (typ) | ST device includes internal pull-down, simplifies input wiring. |
| PCB layout guidelines | Not specified | Place SMT ceramic capacitors close to supply pins; avoid traces below driver | STGAP2SICSC layout sensitive due to isolation and capacitive coupling. |
| Thermal resistance junction-to-ambient | Not specified | 120 °C/W (typ) | ST device thermal resistance relatively high, requires thermal management consideration. |
| Supply voltage turn-on/off thresholds | Not specified | 14.6 V / 14.8 V (typ) | ST device has UVLO with turn-on/turn-off thresholds, useful for supply sequencing. |
| Wake-up time | Not specified | 20 µs (typ) | ST device requires wake-up time after supply applied, affects startup sequencing. |
| Isolation technology | None | Capacitive coupling | ST device uses capacitive coupling isolation, enabling high isolation voltage but more complex design. |
Design trade-offs
The most fundamental difference between these two drivers is the isolation feature of the STGAP2SICSC versus the non-isolated MCP1402T-E/OT. The ST device’s capacitive coupling isolation supports 5 kVrms isolation voltage, making it suitable for driving high-side or floating MOSFETs/IGBTs in half-bridge or full-bridge applications where galvanic isolation is mandatory. In contrast, the MCP1402T-E/OT is a low-side driver intended for direct ground-referenced MOSFET or IGBT control, with no isolation barrier.
This isolation comes at a cost. The STGAP2SICSC’s larger 8-pin SOIC package consumes more PCB area and requires careful layout to maintain creepage and clearance distances per IEC 60664-1 standards. Designers must place SMT ceramic capacitors close to supply rails and avoid conductive areas beneath the IC to prevent coupling issues. The MCP1402T-E/OT’s small SOT-23-5 package fits well in compact designs without such layout constraints.
Peak output current capability is another major consideration. The ST device supports up to 4A peak source and sink current, enabling fast charging/discharging of large gate capacitances for high-speed switching and low switching losses in high-power applications. The MCP1402T-E/OT maxes out at 500mA, which limits switching speed and may increase losses in large MOSFETs or IGBTs. However, for smaller MOSFETs or lower switching frequencies, the MCP1402T-E/OT’s current is sufficient and more power-efficient.
Thermally, the MCP1402T-E/OT can operate up to 150°C junction temperature, providing more headroom in harsh environments. The ST device is limited to 125°C max junction temp and has a relatively high thermal resistance (120°C/W), requiring thermal mitigation especially at high switching currents.
The MCP1402T-E/OT supports a wider supply voltage range (4.5V to 18V) suitable for a variety of gate voltage standards, whereas the STGAP2SICSC logic supply is limited to 3.1V to 5.5V, with the gate drive supply operating typically at 26V. This split supply requirement and UVLO thresholds (around 14.6V) in the ST device complicate power sequencing and supply design but enable operating at higher gate voltages safely.
From a firmware perspective, the STGAP2SICSC has longer propagation delays (~75ns typical) and slower rise/fall times (30ns typical) compared to the MCP1402T-E/OT (15–19ns). This can impact timing-critical applications where tight synchronization or very high switching frequency (>1MHz) is desired. The ST device is rated for 1MHz max switching frequency, while the MCP1402T-E/OT datasheet does not specify a max frequency but its faster switching times imply suitability for similar or higher frequencies in non-isolated applications.
Cost-wise, the MCP1402T-E/OT is likely cheaper and simpler to implement due to its smaller package and lack of isolation. The STGAP2SICSC’s isolation and integrated clamp, plus more complex package and layout requirements, add BOM and manufacturing cost.
Use-case fit
Choose MCP1402T-E/OT when…
- You need a compact, low-cost low-side driver