MCP1402T-E/OT vs LMG3411R150RWHT: Gate Driver Component Comparison
Quick verdict
For simple, low-voltage MOSFET or IGBT low-side drive applications requiring modest peak currents and minimal board space, the MCP1402T-E/OT is the better choice due to its small SOT-23 package and adequate 500mA drive capability. Conversely, for high-voltage GaN device driving with integrated protection and high peak currents up to 6A, especially in half-bridge or high-side configurations, the LMG3411R150RWHT offers a more integrated, robust solution despite a larger footprint and higher complexity.
Spec comparison table
| Spec | MCP1402T-E/OT | LMG3411R150RWHT | Notes |
|---|---|---|---|
| Channel Type | Single | Single | Equivalent; both are single drivers |
| Current Peak Output (Source/Sink) | 500mA / 500mA | 6A | LMG3411R150RWHT provides 12x higher peak current, enabling drive of large GaN FETs |
| Programmability | Not Verified | Not specified | Neither part is programmable; no advantage |
| Driven Configuration | Low-Side | High Side | MCP1402T-E/OT is low-side only; LMG3411R150RWHT supports high-side, enabling more topologies |
| Gate Type | IGBT, MOSFET (N-Channel, P-Channel) | N-Channel | MCP1402T-E/OT supports P-Channel MOSFETs and IGBTs, while LMG3411R150RWHT is N-Channel only |
| Input Type | Non-Inverting | Non-Inverting | Equivalent |
| Logic Voltage VIL / VIH | 0.8V / 2.4V | Not specified | MCP1402T-E/OT specifies logic thresholds; TI part does not detail; MCP1402T-E/OT better for known logic compatibility |
| Mounting Type | Surface Mount | Surface Mount | Equivalent |
| Number of Drivers | 1 | 1 | Equivalent |
| Operating Temperature Range | -40°C to 150°C (TJ) | -40°C to 125°C (TJ) | MCP1402T-E/OT runs hotter by 25°C, useful in higher temperature environments |
| Package Case | SC-74A, SOT-753 (SOT-23-5) | 32-VQFN (8x8 mm) | MCP1402T-E/OT is much smaller and simpler to place; LMG3411R150RWHT is larger, more complex |
| Rise/Fall Time (typical) | 19ns / 15ns | Not specified | MCP1402T-E/OT rise/fall times known and fast; TI part does not specify |
| Supply Voltage | 4.5V to 18V | 9.5V to 18V | MCP1402T-E/OT supports wider supply range, including lower voltages |
| Fault Protection | None | Over Current, Over Temperature, UVLO | LMG3411R150RWHT integrates multiple protections, improving system reliability |
| Features | None | Bootstrap Circuit, 5V Regulated Output | LMG3411R150RWHT offers integrated bootstrap and regulated output, simplifying supply design |
| Interface | Logic | Logic, PWM | LMG3411R150RWHT supports PWM interface, useful for advanced switching control |
| Output Configuration | Low Side | High Side | As above, impacts topology choices |
| Output Type | N-Channel / P-Channel MOSFET compatible | N-Channel only | MCP1402T-E/OT supports more transistor types |
| Ratio Input to Output | Not specified | 1:1 | LMG3411R150RWHT provides direct input-output ratio, easing timing considerations |
| RDS(on) Typical | Not applicable (driver IC) | 150mΩ | This spec refers to integrated switch resistance in LMG3411R150RWHT, relevant to losses |
| Voltage Load (Max) | Not applicable (driver only) | 480V | LMG3411R150RWHT supports high-voltage GaN device switching |
| Switch Type | Not applicable | Load Switch | LMG3411R150RWHT integrates load switch, reducing external components |
Design trade-offs
The MCP1402T-E/OT is a conventional single-channel low-side gate driver packaged in a tiny SOT-23-5 form factor. Its 500mA peak source and sink current capability is sufficient for driving typical low-voltage N- or P-channel MOSFETs or IGBTs in low-frequency or moderate switching speed applications. Its fast rise (19ns) and fall (15ns) times enable decent switching performance without overly stressing the gate or requiring large gate resistors. The wide supply voltage range (4.5V to 18V) allows flexibility in single-supply designs and makes it suitable for battery-powered or low-voltage systems. The extended junction temperature rating to 150°C supports demanding thermal environments or less conservative derating.
In contrast, the LMG3411R150RWHT integrates a high-side driver optimized for 600V GaN power transistors, with an output current capability of 6A — more than an order of magnitude higher than the MCP1402T-E/OT. This makes it suitable for driving large GaN FETs with very low gate charge, enabling extremely fast switching transitions and high frequency operation with minimal losses. However, the LMG3411R150RWHT’s supply voltage minimum is 9.5V, restricting its use in low-voltage logic or battery systems. The integrated bootstrap circuit and 5V regulated output simplify power supply design but add complexity and increase PCB area due to the 32-pin 8x8 mm QFN package with exposed pad. The maximum operating temperature of 125°C (TJ) is lower than the MCP1402T-E/OT, which may require more careful thermal management in high-density applications.
From a layout perspective, the MCP1402T-E/OT’s small SOT-23 package minimizes board space and routing complexity, making it a straightforward choice for compact designs. The LMG3411R150RWHT demands careful PCB layout to handle high switching currents, minimize parasitic inductances, and optimize thermal dissipation through its exposed pad. Its integrated protections (overcurrent, overtemperature, UVLO) add robustness, potentially reducing external monitoring circuitry and improving system reliability in demanding conditions.
Cost-wise, the MCP1402T-E/OT is likely significantly cheaper at volume given its simpler architecture and smaller package. The LMG3411R150RWHT’s integration and high-performance features come at a premium, justified mostly in high-voltage, high-frequency GaN-based power stages.
Use-case fit
Choose MCP1402T-E/OT when…
- Designing low-side gate drive for IGBTs or MOSFETs in 12V or 24V DC power supplies where gate current requirements are modest (≤500mA).
- Board space is limited and a small SOT-23 package simplifies layout and reduces BOM cost.
- Operating temperature can reach up to 150°C, requiring components rated for higher junction temperatures.
- The design requires a wide supply voltage range down to 4.5V, such as battery-powered or automotive applications.
- The system does not require integrated fault protection or bootstrap circuitry and uses an external bootstrap or supply arrangement.
Choose LMG3411R150RWHT when…
- Driving high-voltage (up to 600V) GaN FETs in half-bridge or high-side configurations requiring high peak gate currents up to 6A.
- The design benefits from integrated fault protections (overcurrent, overtemperature, UVLO) to improve system safety and reduce external circuitry.
- Implementing fast PWM switching at high frequency where integrated bootstrap and regulated 5V output simplify power stage design.
- The PCB can accommodate the larger 32-pin QFN package and requires robust thermal management via exposed pad.
- The application calls for tight timing control with a 1:1 input-output ratio and logic/PWM interface for advanced control schemes.
Drop-in compatibility
These two devices are not pin-compatible or footprint-compatible. The MCP1402T-E/OT comes in a small 5-pin SOT-23 package targeting low-side drive with a simple pinout, while the LMG3411R150RWHT is a 32-pin 8x8 mm QFN with integrated protections and bootstrap circuitry designed for high-side GaN gate drive. Substituting one for the other would require a complete redesign of the PCB footprint, power supply configuration, and potentially the control firmware due to differing interfaces and functionalities.
Alternatives to consider
- IR2110 (International Rectifier / Infineon): Widely used high-voltage high-side/low-side driver with bootstrap, suitable for MOSFETs and IGBTs up to 500V, offering a middle ground between simple and integrated drivers.
- UCC37322 (Texas Instruments): Dual 3A low-side driver with fast switching times, suitable for moderate power MOSFET applications with higher drive current than MCP1402T-E/OT but smaller than LMG3411R150RWHT.
- **Si826x family (Silicon Labs):