MCP1402T-E/OT vs LMG3411R150RWHR: Gate Driver Component Comparison
Quick verdict
For simple low-side MOSFET or IGBT gate driving in cost-sensitive, low-power applications, the MCP1402T-E/OT offers a compact, efficient solution with sufficient 500mA peak drive current and a minimal footprint. For high-voltage, high-current applications requiring integrated GaN devices, protection features, and high-side switching up to 6A, the LMG3411R150RWHR is the clear choice despite its larger size and higher complexity.
Spec comparison table
| Spec | MCP1402T-E/OT | LMG3411R150RWHR | Notes |
|---|---|---|---|
| Channel Type | Single | Single | Equivalent for single-channel drive applications. |
| Current Peak Output (Source/Sink) | 500mA / 500mA | 6A | LMG3411R150RWHR supports 12× higher peak current, critical for fast switching of large loads. |
| Driven Configuration | Low-Side | High Side | MCP1402T-E/OT only for low-side use, LMG3411R150RWHR integrated for high-side switching. |
| Gate Type | IGBT, MOSFET (N-Channel, P-Channel) | N-Channel only | MCP1402T-E/OT supports a wider range of transistor types. |
| Input Type | Non-Inverting | Non-Inverting | Both support non-inverting logic inputs. |
| Logic Voltage VIH / VIL | 2.4V / 0.8V | Not explicitly specified | MCP1402T-E/OT logic thresholds given, useful for 3.3V or 5V logic compatibility. |
| Mounting Type | Surface Mount | Surface Mount | Both are surface mount packages. |
| Number of Drivers | 1 | 1 | Single output driver for both parts. |
| Operating Temperature Range | -40°C to 150°C (TJ) | -40°C to 125°C (TJ) | MCP1402T-E/OT supports higher max junction temperature. |
| Package Case | SC-74A / SOT-753 (SOT-23-5) | 32-VQFN (8x8 mm, Exposed Pad) | MCP1402T-E/OT is much smaller, easier to place in dense designs; LMG3411R150RWHR requires more board space and thermal management. |
| Rise / Fall Time (typical) | 19ns / 15ns | Not specified | MCP1402T-E/OT provides fast switching times for its class; LMG3411R150RWHR datasheet does not specify. |
| Supply Voltage | 4.5V to 18V | 9.5V to 18V | MCP1402T-E/OT supports lower supply voltages, allowing more flexible power rails. |
| Fault Protection | None | Over Current, Over Temperature, UVLO | LMG3411R150RWHR includes integrated protection, beneficial for robust designs. |
| Features | None | Bootstrap Circuit, 5V Regulated Output | LMG3411R150RWHR integrates bootstrap and regulated output for simplified gate drive. |
| Interface | Logic | Logic, PWM | LMG3411R150RWHR explicitly supports PWM inputs for power conversion applications. |
| Output Configuration | Low Side | High Side | Reiterates configuration suitability. |
| Output Type | N/A (driver only, drives MOSFET/IGBT gates) | N-Channel (integrated GaN switch) | LMG3411R150RWHR integrates the GaN switch itself, not just a driver. |
| Ratio Input:Output | N/A | 1:1 | LMG3411R150RWHR has a direct 1:1 input to output ratio for the integrated switch. |
| RDS(on) Typical | N/A | 150mΩ | LMG3411R150RWHR’s integrated switch resistance important for conduction loss calculation. |
| Voltage Load (Max) | N/A | 480V | LMG3411R150RWHR supports very high voltage applications; MCP1402T-E/OT does not drive load directly. |
Design trade-offs
The MCP1402T-E/OT is a dedicated low-side gate driver IC designed for driving discrete MOSFETs or IGBTs with moderate peak drive currents of 500mA. This is sufficient for switching devices in low-to-mid power designs, where switching speed and gate charge are moderate. Its minimal SOT-23-5 package allows very compact PCB layouts, which is advantageous when board space is constrained. The wide supply voltage range (4.5V to 18V) provides flexibility for different gate voltage requirements, including logic-level MOSFETs.
In contrast, the LMG3411R150RWHR integrates a 150mΩ 600V GaN FET with a dedicated high-side driver, rated for peak currents up to 6A, suitable for high-speed, high-efficiency power conversion at elevated voltages. The integrated bootstrap circuit and fault protection (overcurrent, overtemperature, UVLO) simplify system design by reducing external components and adding robustness. However, the package is a large 32-pin 8x8 mm QFN with an exposed pad, requiring careful PCB thermal design and larger real estate. The supply voltage range starts at 9.5V, limiting flexibility compared to the MCP1402T-E/OT.
From a thermal standpoint, MCP1402T-E/OT’s small package and lower drive current mean less heat dissipation, making it suitable for designs with simple thermal constraints. The LMG3411R150RWHR’s integrated GaN device and 6A drive current imply higher switching speeds but also necessitate careful thermal management and layout to handle power dissipation and maintain reliability.
Firmware-wise, the MCP1402T-E/OT’s non-inverting logic input with a logic voltage threshold defined makes it straightforward for simple on/off control. The LMG3411R150RWHR’s support for PWM inputs and integrated protection features align better with complex power stages requiring dynamic control and fault response.
Cost-wise, the MCP1402T-E/OT is likely significantly cheaper at volume given its simpler architecture and smaller package, while the LMG3411R150RWHR’s advanced GaN integration and protection features command a higher unit price, justifiable only in high-performance, high-voltage designs.
Use-case fit
Choose MCP1402T-E/OT when…
- Designing a low-side driver stage for discrete MOSFETs or IGBTs in low-to-mid power DC-DC converters or motor drivers under 500mA gate drive current.
- Board space is constrained, and a small SOT-23 package is required.
- Operating voltages vary between 4.5V and 18V, including 5V or 12V rails.
- Thermal dissipation is minimal, and no integrated fault protection is needed.
- Cost sensitivity is high, and the design does not require integrated switches or high-side drive.
Choose LMG3411R150RWHR when…
- Implementing high-voltage (up to 480V), high-current (up to 6A) power stages, such as GaN-based synchronous rectifiers or load switches.
- A high-side driver with integrated GaN FET is required to simplify the bill of materials.
- Robustness and protection features (overcurrent, overtemperature, UVLO) are critical to system reliability.
- PWM-based dynamic gate control and fast switching are necessary in high-frequency power conversion.
- Thermal design can accommodate the larger 32-pin QFN package with exposed pad for heat dissipation.
Drop-in compatibility
These two parts are not pin-compatible nor footprint-compatible. The MCP1402T-E/OT is a small 5-pin SOT-23 package designed purely as a gate driver IC, while the LMG3411R150RWHR is a 32-pin QFN package integrating the GaN switch and driver together. Substituting one for the other requires significant redesign of the PCB footprint, power stage topology, and possibly firmware due to the integrated switch and fault protection in the LMG3411R150RWHR. From the provided data, no compatibility exists.
Alternatives to consider
- UCC37322 (Texas Instruments): A high-speed, dual-channel MOSFET driver with 9A peak current, suitable for mid-power gate driving with fast switching requirements.
- IR2110 (Infineon): Widely used high-voltage high-/low-side driver IC with bootstrap functionality, useful for half-bridge topologies.
- Si8233 (Silicon Labs): Isolated gate driver with integrated level shifting and fault reporting, for designs requiring galvanic isolation and protection.
This comparison targets engineers selecting gate drivers for discrete MOSFET/IGBT stages versus integrated GaN switch solutions, focusing on practical design implications rather than promotional claims.