MCP1402T-E/OT vs LMG3411R050RWHT: Gate Driver Component Comparison
Quick verdict
For low-voltage, low-side MOSFET or IGBT driving up to 500mA peak gate current, the MCP1402T-E/OT is a straightforward, compact choice ideal for simple driver stages with minimal thermal management. For high-voltage GaN FET applications requiring integrated protection, high-side drive capability, and gate drive currents up to 12A, the LMG3411R050RWHT is clearly the better, though more complex and costly, solution.
Spec comparison table
| Spec | MCP1402T-E/OT | LMG3411R050RWHT | Notes |
|---|---|---|---|
| Channel type | Single | Single | Equal; both single-channel outputs. |
| Current peak output (source/sink) | 500mA / 500mA | 12A | LMG3411R050RWHT provides 24x higher current, enabling fast switching of large gate charge FETs. |
| Driven configuration | Low-Side | High-Side | MCP1402T-E/OT limited to low-side; LMG3411R050RWHT supports high-side, critical for half/full-bridge topologies. |
| Gate type | IGBT, MOSFET (N-Channel, P-Channel) | N-Channel (GaN) | MCP1402T-E/OT supports both IGBT and MOSFET; LMG3411R050RWHT is specialized for GaN N-Channel. |
| Input type | Non-Inverting | Non-Inverting | Equal. |
| Logic voltage (V_IL, V_IH) | 0.8V, 2.4V | Not specified (logic, PWM interface) | MCP1402T-E/OT documented thresholds; LMG3411R050RWHT likely compatible with standard logic levels. |
| Mounting type | Surface Mount | Surface Mount | Equal. |
| Number of drivers | 1 | 1 | Equal. |
| Operating temperature range | -40°C to 150°C (TJ) | -40°C to 125°C (TJ) | MCP1402T-E/OT supports 25°C wider TJ range, useful for higher temp environments. |
| Package case | SC-74A (SOT-23-5) | 32-VQFN (8x8 mm) | MCP1402T-E/OT very small footprint; LMG3411R050RWHT much larger package for thermal and power handling. |
| Rise/fall time (typical) | 19ns / 15ns | Not specified | MCP1402T-E/OT fast switching times documented; LMG3411R050RWHT rise/fall not listed, but high current implies fast switching capability. |
| Supply voltage range | 4.5V to 18V | 9.5V to 18V | MCP1402T-E/OT supports lower minimum voltage, allowing operation from 5V rails; LMG3411R050RWHT requires higher minimum supply. |
| Fault protection | None | Over Current, Over Temperature, UVLO | LMG3411R050RWHT includes integrated protections, enhancing reliability in demanding applications. |
| Features | None | Bootstrap Circuit, 5V Regulated Output | LMG3411R050RWHT has integrated bootstrap and regulator, simplifying high-side driver design. |
| Output configuration | Low-Side | High-Side | Matches driven configuration; affects half/full bridge topology implementation. |
| Output type | IGBT, MOSFET (N & P-Channel) | N-Channel GaN | MCP1402T-E/OT supports wider transistor types; LMG3411R050RWHT optimized for GaN FETs. |
| Ratio input/output | N/A | 1:1 | LMG3411R050RWHT input-to-output ratio simplifies timing and voltage scaling. |
| R_DS(on) (typ) | N/A | 57mΩ | Internal switch resistance relevant for integrated switches; not applicable to MCP1402T-E/OT. |
| Voltage load max | N/A | 480V | LMG3411R050RWHT rated for high-voltage GaN switching; MCP1402T-E/OT is a gate driver IC only. |
| Voltage supply typical | 4.5V to 18V | 9.5V to 18V | See supply voltage range above; LMG3411R050RWHT requires higher minimum voltage. |
| Switch type | N/A | Load Switch | LMG3411R050RWHT integrates switch function, unlike MCP1402T-E/OT. |
Design trade-offs
The MCP1402T-E/OT is a minimalist, low-side gate driver intended for moderate-speed switching of low- to mid-power MOSFETs or IGBTs. Its 500mA peak source/sink current is sufficient for devices with modest gate charge, but it will struggle with large MOSFETs or GaN devices that require high peak gate currents to achieve fast switching and minimize losses. The device’s small SOT-23-5 package simplifies PCB layout in space-constrained designs but limits power dissipation—thermal management is straightforward but must consider the 150°C max junction.
In contrast, the LMG3411R050RWHT integrates a high-current (12A peak) gate driver with advanced protection features including over-current, over-temperature, and undervoltage lockout (UVLO). This makes it suitable for high-frequency, high-voltage GaN FET applications, where fast, clean switching transitions are critical to efficiency and EMI reduction. The integrated bootstrap and 5V regulated output reduce BOM complexity for high-side driving. However, the larger 32-VQFN package demands careful PCB thermal design, including exposed pad soldering and possibly thermal vias. The typical operating temperature range tops out at 125°C, which may impact reliability margins in high-temperature environments.
From a supply perspective, the MCP1402T-E/OT supports a wider input voltage range starting at 4.5V, allowing direct drive from standard 5V logic rails without additional regulators. The LMG3411R050RWHT requires a higher minimum supply of 9.5V, reflecting its higher internal power demands. This difference impacts power architecture and may require additional rail generation or regulators.
Layout-wise, the MCP1402T-E/OT’s simple pinout and small footprint make it easy to integrate, but care is needed to manage switching noise and ground bounce at higher switching speeds. The LMG3411R050RWHT demands meticulous layout to handle the high transient currents and to keep parasitic inductances low, especially around the gate and source pins, to prevent voltage overshoot and ringing that can degrade GaN device lifetime.
Cost-wise, the MCP1402T-E/OT will be significantly cheaper in volume due to its simpler architecture and smaller package size. The LMG3411R050RWHT, with integrated features and high-current capability, justifies higher cost in demanding power conversion applications but is overkill and more expensive for simple low-side gate drive.
Use-case fit
Choose MCP1402T-E/OT when:
- Driving low- to mid-power N- or P-channel MOSFETs or IGBTs in low-side configurations with gate charge < 50nC.
- Board space is limited and a small SOT-23-5 package is required.
- Operating voltage rails include 5V or other voltages down to 4.5V.
- Thermal dissipation is limited and switching frequencies are moderate (where 500mA peak gate current is sufficient).
- Cost sensitivity is high, and integrated protection features are not required.
Choose LMG3411R050RWHT when:
- Driving high-voltage (up to 480V) GaN N-Channel FETs requiring fast switching and high peak gate currents (up to 12A).
- A high-side driver with integrated bootstrap and 5V regulator is necessary for half-bridge or full-bridge topologies.
- The design demands integrated fault protection (over-current, over-temperature, UVLO) to improve system robustness.
- The design can accommodate a larger PCB footprint and requires precise timing control with 1:1 input-to-output ratio.
- Operating voltages are 9.5V or higher, and thermal management provisions exist for the 32-VQFN package.
Drop-in compatibility
These two parts are not pin- or footprint-compatible. The MCP1402T-E/OT is a low-side driver in a tiny 5-pin SOT-23 package, while the LMG3411R050RWHT is a high-side GaN driver with integrated switch in a large 32-pin VQFN package. Substituting one for the other requires significant redesign of the PCB footprint, power stage topology, and power supply rails. Signal interface and driver logic will also differ, making them non-interchangeable without major circuit changes.
Alternatives to consider
- IR2110 (International Rectifier / Infineon): High-voltage high-side/low-side driver IC for MOSFET/IGBT with bootstrap, used widely in half/full bridge configurations.
- UCC37322 (Texas Instruments): Dual high-speed low-side gate driver with higher peak current (up to 9A