MCP1402T-E/OT vs LMG3410R150RWHR Gate Driver ICs: Component Comparison
Quick verdict
For simple low-side MOSFET or IGBT drive applications with moderate switching speeds and supply voltages up to 18 V, the MCP1402T-E/OT is a compact, cost-effective choice. However, for high-voltage GaN transistor driving with integrated protection and high peak output current, especially in high-frequency DC-DC converters or motor drives, the LMG3410R150RWHR is the clear winner.
Spec comparison table
| Spec | MCP1402T-E/OT | LMG3410R150RWHR | Notes |
|---|---|---|---|
| Channel type | Single | Single | Both single-channel; no difference. |
| Current peak output source/sink | 500 mA | 6 A | LMG3410R150RWHR supports 12x higher peak current, critical for fast switching large MOSFET/GaN. |
| Driven configuration | Low-Side | High Side | MCP1402T-E/OT limited to low-side drive; LMG3410R150RWHR supports high-side, enabling half-bridge topologies. |
| Gate type | IGBT, MOSFET (N-Channel, P-Channel) | N-Channel (GaN) | MCP1402T-E/OT supports both MOSFET and IGBT; LMG3410R150RWHR optimized for GaN N-channel devices, improving performance in GaN-specific applications. |
| Input type | Non-Inverting | Non-Inverting | Equivalent input logic; no difference. |
| Logic voltage (V_IL, V_IH) | 0.8 V, 2.4 V | Not explicitly specified | MCP1402T-E/OT logic thresholds specified, useful for CMOS/TTL interface design. |
| Number of drivers | 1 | 1 | Both single output channel. |
| Operating temperature range | -40°C to 150°C (TJ) | -40°C to 125°C (TJ) | MCP1402T-E/OT supports a wider temperature range, useful in harsher environments. |
| Package case | SOT-23-5 (SC-74A, SOT-753) | 32-VQFN (8x8 mm) | MCP1402T-E/OT smaller footprint; LMG3410R150RWHR larger, requiring more board area but better thermal dissipation. |
| Rise/fall time (typical) | 19 ns / 15 ns | Not specified | MCP1402T-E/OT provides explicit rise/fall times; LMG3410R150RWHR datasheet does not specify, but higher current suggests faster drive capability. |
| Supply voltage range | 4.5 V to 18 V | 9.5 V to 18 V | MCP1402T-E/OT supports wider input voltage, allowing more flexible power rail options. |
| Fault protection | None | Over Current, Over Temperature, UVLO | LMG3410R150RWHR includes integrated fault protections, reducing external circuitry and improving reliability. |
| Features | None | Bootstrap circuit, 5 V regulated output | LMG3410R150RWHR integrates bootstrap and regulated outputs, easing power supply design. |
| Interface | Logic | Logic, PWM | LMG3410R150RWHR explicitly supports PWM inputs, suitable for switching converters. |
| Output configuration | Low Side | High Side | Reiterates drive topology difference. |
| Output current max | 500 mA | 6 A | Reiterated; critical for driving large or fast-switching transistors. |
| Output type | N-Channel, P-Channel MOSFET / IGBT | N-Channel GaN | Specific transistor compatibility differs; LMG3410R150RWHR specialized for GaN. |
| Ratio input/output | Not specified | 1:1 | LMG3410R150RWHR input-output ratio simplifies timing and signal integrity considerations. |
| R_DS(on) (typical) | Not applicable | 150 mΩ | Indicates internal MOSFET switch resistance in LMG3410R150RWHR; lower R_DS(on) means better efficiency and less heat dissipation inside the driver. |
| Voltage load (max) | Not specified | 480 V | LMG3410R150RWHR supports high-voltage loads, suitable for high-voltage GaN devices. |
| Mounting type | Surface mount | Surface mount | Both surface mount; no difference. |
Design trade-offs
The MCP1402T-E/OT is a small, low-side, single-driver gate driver targeting general-purpose MOSFET or IGBT drive applications. Its 500 mA peak output current and low supply voltage range (4.5–18 V) make it suitable for medium-power switching circuits where gate charge is moderate and switching frequency is not extremely high. The SOT-23-5 package allows compact PCB layouts, which is beneficial for space-constrained designs. However, its lack of fault protection and limited current capability mean external protections and careful layout are needed to prevent damage and EMI issues.
In contrast, the LMG3410R150RWHR targets high-voltage GaN FET applications. Its integrated driver and 6 A peak output current capacity enable rapid charging and discharging of GaN transistor gates, which have very low gate charge but require high peak currents to achieve fast switching and minimize losses. The high-side output configuration and integrated bootstrap circuit simplify half-bridge designs and reduce external component count. Fault protections for overcurrent, overtemperature, and undervoltage lockout improve robustness and ease firmware complexity for fault handling. The larger 32-VQFN package facilitates better thermal management, critical at high switching frequencies and currents.
From a thermal perspective, MCP1402T-E/OT running at modest switching speeds and currents can be cooled passively with minimal PCB copper area. LMG3410R150RWHR, with its higher current drive and integrated MOSFETs, demands careful thermal design, including exposed pad soldering and possibly heatsinking. The higher R_DS(on) of 150 mΩ in the LMG3410R150RWHR package is low for an integrated driver but still contributes to power dissipation under heavy switching loads.
Firmware-wise, the LMG3410R150RWHR’s built-in protections reduce the need for complex driver monitoring and fault detection logic, whereas MCP1402T-E/OT users must implement these externally or rely on system-level protections.
Cost-wise, the MCP1402T-E/OT is expected to be significantly cheaper at volume due to simpler packaging, fewer integrated features, and lower complexity. The LMG3410R150RWHR’s integrated GaN driver and protections justify its higher cost in applications demanding high efficiency and reliability.
Use-case fit
Choose MCP1402T-E/OT when…
- Your design requires a simple low-side driver for moderate-voltage (up to 18 V) MOSFETs or IGBTs in DC-DC converters or relay drivers.
- PCB space is limited and you need a minimal footprint driver in a SOT-23-5 package.
- Peak gate drive current demand is low (≤500 mA), and switching frequencies are moderate (e.g., below 200 kHz).
- Operating temperature range must cover extended industrial environments up to 150°C junction temperature.
- You have an existing system architecture with external fault detection and do not require integrated protection features.
Choose LMG3410R150RWHR when…
- Driving high-voltage (up to 480 V) GaN N-channel transistors in half-bridge or full-bridge topologies.
- High peak gate drive current (up to 6 A) is required to achieve fast switching and minimize GaN losses.
- Integrated fault protection (overcurrent, overtemperature, UVLO) is needed to simplify system design and improve reliability.
- Your application demands integrated bootstrap circuitry and regulated 5 V output to reduce BOM complexity.
- Thermal management resources allow for the larger 32-VQFN package and you require robust high-frequency PWM switching capability.
Drop-in compatibility
The MCP1402T-E/OT and LMG3410R150RWHR are neither pin-compatible nor footprint-compatible. MCP1402T-E/OT comes in a small 5-pin SOT-23 package optimized for low-side drive only, whereas LMG3410R150RWHR is a 32-pin QFN package designed for high-side GaN transistor drive with integrated features. Substituting one for the other requires significant schematic and PCB redesign, including power supply arrangements, gate drive topology, and thermal considerations. No direct drop-in replacement is possible.
Alternatives to consider
- UCC37322 (Texas Instruments): Dual 9 A high-speed low-side MOSFET driver; good for high-current MOSFET driving with fast switching in a compact package.
- IR2110 (Infineon): High- and low-side driver with level shifting, suitable for half-bridge applications but requires external bootstrap components.
- MIC4452 (Microchip Technology): High-speed 9 A peak current driver in an 8-pin package, balancing high-current drive and simpler layout than LMG3410