MCP1402T-E/OT vs 1EDN7116UXTSA1: Gate Driver IC Comparison
Quick verdict
For low-side MOSFET or IGBT gate driving in compact, cost-sensitive designs, the MCP1402T-E/OT is the better choice due to its robust 500mA drive current, wide supply range, and small SOT-23-5 package. For high-side GaN or N-channel MOSFET driving, especially where bootstrap voltages up to 200V are needed, the 1EDN7116UXTSA1 is the clear candidate, designed specifically for high-side operation and GaN compatibility.
Spec comparison table
| Spec | MCP1402T-E/OT | 1EDN7116UXTSA1 | Notes |
|---|---|---|---|
| Channel type | Single | Single | Equivalent; both are single drivers. |
| Current peak output source/sink | 500 mA / 500 mA | Not specified | MCP1402T-E/OT provides explicit 500mA drive capability, useful for switching speed control. |
| Driven configuration | Low-Side | High-Side | Different intended applications; not interchangeable without circuit redesign. |
| Gate type supported | IGBT, MOSFET (N & P-Channel) | GaN FET, MOSFET (N-Channel) | MCP1402T-E/OT supports wider device types including P-channel; 1EDN7116UXTSA1 is GaN-optimized. |
| Input type | Non-Inverting | Not specified | MCP1402T-E/OT input logic thresholds are defined, aiding design predictability. |
| Logic voltage V_IL / V_IH | 0.8 V / 2.4 V | Not specified | MCP1402T-E/OT defined logic thresholds help ensure compatibility with standard logic levels. |
| Mounting type | Surface Mount | Surface Mount | Same; both suitable for standard SMT processes. |
| Number of drivers | 1 | 1 | Equivalent. |
| Operating temperature range | -40°C to 150°C (TJ) | Not specified | MCP1402T-E/OT rated for automotive-grade TJ; better for harsh environments. |
| Package case | SC-74A, SOT-753 | Not specified | MCP1402T-E/OT has a defined small-outline package; 1EDN7116UXTSA1 package unspecified. |
| Supplier device package | SOT-23-5 | Not specified | MCP1402T-E/OT package well-documented; 1EDN7116UXTSA1 package details missing. |
| Rise/fall time (typical) | 19 ns / 15 ns | Not specified | MCP1402T-E/OT provides fast switching edges, beneficial for minimizing switching losses. |
| Voltage supply | 4.5 V to 18 V | Not specified | MCP1402T-E/OT supports a wide supply range aiding flexibility in system design. |
| High-side voltage max bootstrap | N/A | 200 V | 1EDN7116UXTSA1 supports bootstrap voltages up to 200 V, critical for high-side GaN driving. |
| Digi-Key programmable | Not Verified | Not Verified | Neither device offers verified programmability. |
Design trade-offs
The MCP1402T-E/OT and 1EDN7116UXTSA1 serve fundamentally different gate driving roles: low-side vs high-side. This distinction impacts PCB layout, power stage architecture, and system complexity. The MCP1402T-E/OT’s low-side non-inverting drive and defined logic thresholds simplify interface design with common microcontrollers or logic ICs operating at 3.3V or 5V logic levels. Its 500mA peak drive current is on the higher side for a small SOT-23-5 package, enabling rapid MOSFET or IGBT switching with manageable gate charge, which reduces switching losses and EMI.
Conversely, the 1EDN7116UXTSA1 is specialized for high-side gate driving with a bootstrap voltage rating up to 200 V, making it suitable for half-bridge or synchronous buck top-side switches, especially GaN FETs. Its support for GaN devices indicates optimized gate drive voltage levels and timing to handle fast switching speeds and low gate charge characteristics typical of GaN transistors. However, the absence of detailed rise/fall time specs and package information requires designers to consult the full datasheet for thermal and layout guidelines.
Thermally, the MCP1402T-E/OT’s wide junction temperature range (-40°C to 150°C) allows deployment in demanding environments, such as automotive or industrial power stages. The 1EDN7116UXTSA1’s thermal limits are unspecified here, so caution is advised in high ambient temperature applications until verified. The MCP1402T-E/OT’s compact SOT-23-5 package favors low-profile, space-constrained designs, while the 1EDN7116UXTSA1’s package details are unavailable, potentially influencing mechanical integration.
In terms of efficiency, the MCP1402T-E/OT’s fast rise/fall times (19ns/15ns) can lower switching transition losses, but this depends on the MOSFET gate charge and layout parasitics. The 1EDN7116UXTSA1’s high-side GaN focus implies it can sustain high switching frequencies with minimal conduction and switching losses inherent to GaN technology, but this requires a robust bootstrap supply and careful layout to avoid shoot-through or bootstrap depletion.
Cost-wise, the MCP1402T-E/OT is likely more affordable given its simpler low-side function and mature technology. The 1EDN7116UXTSA1, as a specialized GaN high-side driver, may carry a premium but delivers necessary features for high-voltage, high-frequency topologies.
Use-case fit
Choose MCP1402T-E/OT when…
- Driving low-side N-channel MOSFETs or IGBTs in DC-DC converters or motor drives with gate charges up to moderate levels, requiring up to 500mA peak current for fast switching.
- Operating in harsh thermal environments needing junction temperatures up to 150°C.
- Designing compact, cost-sensitive boards where a small SOT-23-5 package is critical.
- Using a non-inverting input logic interface with 3.3V or 5V logic levels.
- Needing a wide supply voltage range (4.5V to 18V) to accommodate various power rails.
Choose 1EDN7116UXTSA1 when…
- Implementing high-side GaN or N-channel MOSFET switching with bootstrap voltages up to 200 V.
- Designing half-bridge or full-bridge topologies requiring dedicated high-side gate drivers.
- Focusing on high-frequency switching where GaN FETs’ low gate charge and fast switching are exploited.
- Targeting advanced power stages that require integrated high-side drivers optimized for GaN devices.
- Systems where bootstrap voltage capability and high-side level shifting are mandatory.
Drop-in compatibility
These devices are not pin- or footprint-compatible. The MCP1402T-E/OT is a low-side driver in a SOT-23-5 (SC-74A) package with non-inverting input logic, while the 1EDN7116UXTSA1 serves as a high-side driver with unspecified package and pinout. Substituting one for the other requires redesigning the gate drive circuitry, including bootstrap components and possibly changing the MOSFET type and placement. No direct drop-in replacement relationship exists.
Alternatives to consider
- MIC4452 (Microchip) — High current (up to 6A) low-side MOSFET driver in a compact package, suitable for faster switching in low-side applications.
- UCC37322 (Texas Instruments) — Dual high-speed MOSFET driver with push-pull outputs, useful for half-bridge or full-bridge topologies.
- IR2104 (Infineon) — High- and low-side driver IC with integrated bootstrap diode, appropriate for driving N-channel MOSFETs in half-bridge configurations.