Comparison: Infineon 2ED2106S06FXUMA1 vs 1EDN9550BXTSA1 Gate Drivers
Quick verdict
For general-purpose gate driving of IGBTs or MOSFETs with moderate switching speeds and bootstrap voltage up to 650 V, the 2ED2106S06FXUMA1 is a solid choice, especially when integrated CMOS/TTL inputs and moderate peak output currents suffice. When driving high-speed SiC MOSFETs or demanding applications requiring extremely fast switching transitions and peak currents over 5A, the 1EDN9550BXTSA1 is the clear winner, thanks to its nanosecond switching edges and high peak source/sink current capability.
Spec comparison table
| Spec | 2ED2106S06FXUMA1 | 1EDN9550BXTSA1 | Notes |
|---|---|---|---|
| Channel Type | Independent (2 drivers) | Single (2 drivers) | Both have 2 independent drivers; similar in channel count |
| Peak Output Current (source/sink) | 290 mA / 700 mA | 5.2 A / 9.4 A | 1EDN9550BXTSA1 offers >7x higher peak currents, better for fast switching and high di/dt |
| Programmable via DigiKey | Not Verified | Not Verified | No verified programmability on either part |
| Driven Configuration | High-Side, Low-Side | High-Side, Low-Side | Both support HS and LS driving |
| Supported Gate Types | IGBT, N-Channel MOSFET | N-Channel MOSFET, SiC MOSFET | 1EDN9550BXTSA1 supports SiC MOSFETs, better suited for wide-bandgap devices |
| Max High-Side Bootstrap Voltage | 650 V | 400 V | 2ED2106S06FXUMA1 supports higher bootstrap voltage, suitable for higher voltage systems |
| Input Type | CMOS, TTL | Inverting, Non-Inverting | 2ED2106S06FXUMA1 uses standard CMOS/TTL inputs; 1EDN9550BXTSA1 input polarity selectable |
| Logic Voltage Levels (VIL/VIH) | 1.1 V / 1.7 V | Not specified | 2ED2106S06FXUMA1 provides explicit logic thresholds, easier for interfacing |
| Mounting Type | Surface Mount | Surface Mount | Both are surface mount |
| Number of Drivers | 2 | 2 | Equivalent |
| Operating Temperature Range | -40°C to 125°C (TA) | -40°C to 150°C (TJ) | 1EDN9550BXTSA1 has wider junction temperature range, better for harsh thermal environments |
| Package Case | 8-SOIC (3.90 mm width) | SOT-23-6 | 1EDN9550BXTSA1 is smaller, beneficial for space-constrained designs |
| Typical Rise/Fall Time | 100 ns / 35 ns | 1 ns / 1 ns | 1EDN9550BXTSA1 is orders of magnitude faster, critical for high frequency/high speed switching |
| Supply Voltage Range | 10 V to 20 V | 4.5 V to 20 V | 1EDN9550BXTSA1 supports lower supply voltages, allowing more flexible system integration |
| Supplier Device Package | PG-DSO-8-69 | PG-SOT23-6-3 | Different package styles, not footprint compatible |
Design trade-offs
The 2ED2106S06FXUMA1 is aimed at applications where moderate switching speeds and classic IGBT or MOSFET drivers are acceptable. Its peak output currents (290 mA sourcing, 700 mA sinking) limit the gate drive speed and the ability to rapidly charge/discharge large gate capacitances. This makes it suitable for lower switching frequency or lower power applications where switching losses and EMI are less critical. Its higher maximum bootstrap voltage of 650 V allows it to be deployed in higher voltage half-bridge topologies, such as 600 V motor drives or industrial converters.
In contrast, the 1EDN9550BXTSA1’s peak currents of 5.2 A source and 9.4 A sink enable it to drive large gate charge devices very rapidly, reducing switching losses and improving efficiency in hard-switched or resonant topologies. The typical rise and fall times of 1 ns are exceptional and specifically target SiC MOSFETs or fast GaN devices in high-frequency applications. This also increases layout sensitivity: parasitic inductances and gate loop design become critical to avoid voltage overshoot or oscillations due to the extremely fast edges. The 1EDN9550BXTSA1’s lower max bootstrap voltage (400 V) restricts its use to lower voltage half-bridge configurations or requires additional bootstrapping considerations.
Thermally, the 1EDN9550BXTSA1 can handle higher junction temperatures up to 150°C, which is beneficial in high power-density designs where cooling is limited. The smaller SOT-23-6 package reduces board space but may complicate thermal dissipation compared to the larger PG-DSO-8-69 package of the 2ED2106S06FXUMA1.
From a firmware perspective, the 1EDN9550BXTSA1’s support for inverting and non-inverting inputs provides more flexibility in logic design and simplifies gate drive polarity control. The 2ED2106S06FXUMA1 uses CMOS/TTL inputs with defined VIH/VIL levels, making it straightforward but less flexible in complex control schemes.
Cost at volume typically favors the smaller package and more modern design of the 1EDN9550BXTSA1, especially in high-speed SiC or GaN systems, although this depends on supply chain factors and should be verified with the supplier.
Use-case fit
Choose 2ED2106S06FXUMA1 when…
- You need to drive classic IGBT or N-channel MOSFETs in industrial motor drives or power supplies requiring bootstrap voltages up to 650 V.
- The switching frequency is moderate (tens of kHz), and gate charge is manageable within 290 mA peak sourcing current.
- Your design uses standard CMOS/TTL logic signals without requiring input polarity inversion.
- Thermal environment is up to 125°C ambient, and space constraints are moderate.
- You prefer a larger SOIC package for easier hand soldering or thermal conduction.
Choose 1EDN9550BXTSA1 when…
- Driving fast-switching SiC MOSFETs or other wide-bandgap devices that require very high peak gate currents (several amps) and extremely fast edges (~1 ns rise/fall).
- Your application operates at switching frequencies above 100 kHz where minimizing switching losses is critical.
- The system logic benefits from inverting/non-inverting input options for flexible gate drive polarity.
- Operating in higher temperature environments up to 150°C junction temperature.
- Board space is limited, and a small SOT-23 package is preferred.
- Your half-bridge voltage does not exceed 400 V bootstrap voltage.
Drop-in compatibility
These two parts are not pin-compatible or footprint-compatible. The 2ED2106S06FXUMA1 comes in an 8-pin SOIC package (PG-DSO-8-69), while the 1EDN9550BXTSA1 is in a smaller 6-pin SOT-23 package (PG-SOT23-6-3). The pinouts differ due to the number of pins and function assignment (e.g., input types and driver configuration). Substituting one for the other would require a PCB redesign and changes in the gate drive circuitry and possibly firmware due to different input types and logic levels.
Alternatives to consider
- Infineon 2EDN7524X: A high-voltage gate driver with integrated bootstrap diode, suitable for 600 V applications with moderate switching speed.
- Texas Instruments UCC37322: High-speed dual MOSFET driver with 9 A peak current, good for fast switching but larger package.
- ON Semiconductor NCP5181: Dual MOSFET driver with separate high and low side drivers, supporting up to 600 V bootstrap and moderate switching speeds.