1EDN7126UXTSA1 vs FAD7191M1X: High-Side Gate Driver IC Comparison
Quick verdict
For single high-side GaN MOSFET driving in applications with moderate voltage (up to 200 V) and simple driver needs, the 1EDN7126UXTSA1 is preferable due to its focused design and GaN compatibility. For more complex half-bridge topologies requiring both high-side and low-side drive, higher voltage capability (up to 600 V), and automotive-grade reliability, the FAD7191M1X offers a more versatile and rugged solution.
Spec comparison table
| Spec | 1EDN7126UXTSA1 | FAD7191M1X | Notes |
|---|---|---|---|
| Driven configuration | High-Side | High-Side, Low-Side | FAD7191M1X supports half-bridge with both drivers, increasing design flexibility. |
| Number of drivers | 1 | 2 | FAD7191M1X can drive both legs, reducing component count in half-bridge designs. |
| Gate type | GaN FET, MOSFET (N-Channel) | IGBT, MOSFET (N-Channel) | 1EDN7126UXTSA1 explicitly supports GaN, critical for fast switching applications. |
| High-side voltage max bootstrap | 200 V | 600 V | FAD7191M1X supports triple the voltage, suitable for higher voltage systems. |
| Current peak output (source/sink) | Not specified | 4.5 A / 4.5 A | FAD7191M1X offers strong drive current, beneficial for fast switching and large gates. |
| Input type | Not specified | Non-Inverting | FAD7191M1X input logic levels defined, aiding interface design. |
| Logic voltage (V_IL, V_IH) | Not specified | 1.2 V (V_IL), 2.5 V (V_IH) | FAD7191M1X provides clear input thresholds, easing MCU/FPGA interfacing. |
| Operating temperature range | Not specified | -40°C to 125°C (TA) | FAD7191M1X supports automotive-grade temperature, better for harsh environments. |
| Package case | Not specified | 14-SOIC (3.90 mm width) | FAD7191M1X package known; 1EDN7126UXTSA1 package details missing, likely smaller/specialized. |
| Mounting type | Not specified | Surface Mount | FAD7191M1X confirmed SMD, standard for mass production. |
| Rise/fall time (typical) | Not specified | 25 ns / 25 ns | FAD7191M1X switching speed specified, useful for timing-sensitive designs. |
| Qualification | Not specified | AEC-Q100 | FAD7191M1X is automotive qualified, suitable for safety-critical applications. |
| Voltage supply range | Not specified | 10 V to 22 V | FAD7191M1X supports wide supply range, easing power supply design. |
| Digikey programmable | Not verified | Not verified | Neither part is listed as programmable on Digikey. |
Design trade-offs
The 1EDN7126UXTSA1 is a single-channel high-side driver optimized for GaN and N-channel MOSFETs, with a maximum bootstrap voltage of 200 V. This makes it a natural fit for mid-voltage GaN applications such as point-of-load converters or battery-powered systems where voltage rails do not exceed 200 V. Its datasheet absence of detailed output current and switching speed specs suggests it targets a niche where the transistor gate is small (GaN typically has low gate charge) and switching transitions can be managed without excessive drive strength.
In contrast, the FAD7191M1X is a dual independent high-side/low-side driver with a robust 600 V bootstrap rating, peak output currents of 4.5 A both sourcing and sinking, and a defined 25 ns rise/fall time. These features indicate suitability for high-voltage half-bridge topologies, including motor drives and automotive traction inverters. Its automotive qualification (AEC-Q100) and extended temperature range (-40°C to 125°C) further align it with harsher environments and demanding reliability targets.
From a layout perspective, the FAD7191M1X’s dual-channel driver reduces the need for a separate low-side driver IC, simplifying board complexity and potentially reducing BOM cost and assembly steps. The higher peak current output facilitates faster switching transitions, which can reduce switching losses at high frequencies but requires careful PCB layout to handle transient currents and minimize EMI.
The 1EDN7126UXTSA1’s lack of detailed package and current specs requires engineers to validate thermal dissipation and switching performance experimentally, especially when pushing switching speeds or driving larger MOSFETs. Its focus on GaN FETs implies an emphasis on low gate charge and fast switching but at voltages below 200 V, limiting its use in higher voltage or complex half-bridge systems.
In terms of supply voltages, the FAD7191M1X’s wide 10 V to 22 V range offers design flexibility, especially for systems with variable or noisy supply rails, while the 1EDN7126UXTSA1’s supply voltage is unspecified but likely narrower, given its bootstrap voltage limit.
Cost considerations at volume will depend heavily on packaging, qualification, and channel count. The FAD7191M1X’s automotive grade and dual driver likely command a higher price than the presumably simpler 1EDN7126UXTSA1, but the integration and voltage rating can offset system-level costs.
Use-case fit
Choose 1EDN7126UXTSA1 when…
- Driving a single high-side GaN FET in a 48 V or lower bus voltage DC-DC converter.
- You require a gate driver optimized for GaN devices with low gate charge and fast switching, without the need for low-side drive.
- Operating in a system with bootstrap voltage limited to 200 V or less.
- Minimizing driver IC count and complexity is critical, and dual-channel drive is unnecessary.
- The design environment is controlled, and automotive qualification is not required.
Choose FAD7191M1X when…
- Designing a half-bridge inverter or synchronous buck converter requiring both high-side and low-side gate drivers.
- Working with IGBTs or MOSFETs at bus voltages up to 600 V, such as industrial motor drives or automotive traction systems.
- Needing a driver with strong peak output current (4.5 A source/sink) for fast switching of large gate charge devices.
- Requiring AEC-Q100 qualification and extended temperature range (-40°C to 125°C) for automotive or harsh environments.
- Your system logic inputs operate in the 1.2 V–2.5 V threshold window, and you want clearly defined input logic levels.
Drop-in compatibility
Based on the available data, the 1EDN7126UXTSA1 and FAD7191M1X are not pin-compatible or footprint-compatible. The FAD7191M1X is a 14-SOIC dual-channel driver, whereas the 1EDN7126UXTSA1’s package details are unspecified, and it is a single-channel device. Substituting one for the other will require board layout changes, including different pin assignments, power supply routing, and potentially different bootstrap circuitry. Additionally, the FAD7191M1X supports both high-side and low-side driving, so wiring and control signals differ substantially.
Alternatives to consider
- UCC37322 (Texas Instruments): Dual high-speed MOSFET driver with 9 A peak current, suitable for high-frequency switching with strong drive capability.
- IR2110 (Infineon/Microchip): Classic high-voltage high-side/low-side driver supporting up to 500 V bootstrap, widely used in industrial applications.
- LTC7001 (Analog Devices): High-side MOSFET driver with integrated level shifting and 100 V rating, optimized for single-channel high-voltage applications.